GA400TD25S Vishay, GA400TD25S Datasheet - Page 3

• Manufacturer Part Number: GA400TD25S
• Description: IGBT FAST 250V 400A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA400TD25S

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 250V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 400A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 36nF @ 30V
• Power - Max: 1350W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: Dual INT-A-PAK (3 + 8)
• Collector- Emitter Voltage Vceo Max: 250 V
• Continuous Collector Current At 25 C: 400 A
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
• Other names: *GA400TD25S; VS-GA400TD25S; VS-GA400TD25S; VSGA400TD25S; VSGA400TD25S

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1000
100
3 0 0
2 0 0
1 0 0
0
Fig. 2 - Typical Output Characteristics
1.0
0.1

T = 150 C
J
125°C
V

CE
T = 25 C
o
J
, Collector-to-Emitter Voltage (V)
S q u a re w a v e :
o
6 0 % o f ra te d
Id eal diod es
1.5
v o lta g e

Fig. 1 - Typical Load Current vs. Frequency
80µs
V
20µs PULSE WIDTH
GE
= 15V
(Load Current = I
1
f, Frequency (kHz)
2.0
RMS
1000
of fundamental)
100
Fig. 3 - Typical Transfer Characteristics
10
5

T = 150 C
J
V
GE
1 0
125°C
, Gate-to-Emitter Voltage (V)
o
GA400TD25S
6
D u ty c y c le : 5 0 %
T = 1 2 5 ° C
T
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 1 8 4 W
J
sink

T = 25 C

J
80µs
= 9 0 ° C
V
5µs PULSE WIDTH
CE
CC
7
o
= 50V
25V
3
1 0 0
8
A