GA400TD25S Vishay, GA400TD25S Datasheet
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GA400TD25S
Specifications of GA400TD25S
VS-GA400TD25S
VS-GA400TD25S
VSGA400TD25S
VSGA400TD25S
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GA400TD25S Summary of contents
Page 1
... Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink S Mounting Torque, Case-to-Terminal 1, 2 & 3S Weight of Module www.irf.com PD -50051D GA400TD25S Standard Speed IGBT 250 CES V = 1.3V CE (on) typ 15V 400A @V ...
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... GA400TD25S Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage — GE(th Forward TransconductanceT fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (kHz) (Load Current = I of fundamental) RMS 1000 T = 150 C 100 = 15V 10 5 2.0 Fig Typical Transfer Characteristics GA400TD25S ° sink = 9 0 ° riv ifie tio 125° 50V 25V CC CE 80µ ...
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... GA400TD25S Case Temperature (°C) C Fig Maximum Collector Current vs. Case Temperature 0.5 0 0.20 0. 0.05 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 2 PULSE WIDTH 1.5 A 1.0 -60 -40 - Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature Notes: 1. Duty factor Peak cta ng ula lse D u ratio n (se c) ...
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... 200V CC C SHORTED 100 0 Fig Typical Gate Charge vs. 1000 R = 100 10 -60 -40 - Fig Typical Switching Losses vs. GA400TD25S = 400V = 440A 400 800 1200 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 150V 800 400 200 100 120 140 160 T , Junction Temperature ( C ) ° ...
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... GA400TD25S 100 R = Ohm 125° 150 C ° 150V 15V 200 400 600 I , Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 5° ° 0.0 0.5 1.0 1.5 2 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 800 1000 0 V Fig Reverse Bias SOA ...
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... ° 5° /dt - (A/µ s) Fig Typical Reverse Recovery vs. di www.irf.com 800A 800A 400A 400A 200A 200A ° ° /dt Fig Typical Recovery Current vs GA400TD25S /dt - (A/µ / ...
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... GA400TD25S Fig Test Circuit for Measurement off(diode d(on Fig Test Waveforms for Circuit of Fig. 17, Defining d(on ff d(off) f Fig Test Waveforms for Circuit of Fig. 17, Defining Vce Fig Test Waveforms for Circuit of Fig. 17 µ S Vce d(off) f trr trr Irr V cc Irr Defining rec ...
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... Figure 21 480V Figure 22. www.irf.com GA400TD25S 150V @25° ...
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... GA400TD25S Notes: Q Repetitive rating 20V, pulse width limited by GE max. junction temperature. R See fig For screws M6. T Pulse width 80µs; single shot. Case Outline — DUAL INT-A-PAK 107.30 [ 4.224 ] 106.30 4.185 93.30 [ 3.673 ] 92.70 3.650 [.314] 2X MAX 48.30 1.902 47.70 1.878 ...