GA400TD25S Vishay, GA400TD25S Datasheet - Page 5
![IGBT FAST 250V 400A INT-A-PAK](/photos/14/29/142971/int-a-pak_sml.jpg)
GA400TD25S
Manufacturer Part Number
GA400TD25S
Description
IGBT FAST 250V 400A INT-A-PAK
Manufacturer
Vishay
Datasheet
1.GA400TD25S.pdf
(10 pages)
Specifications of GA400TD25S
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
250V
Vce(on) (max) @ Vge, Ic
1.6V @ 15V, 400A
Current - Collector (ic) (max)
400A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
36nF @ 30V
Power - Max
1350W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
Dual INT-A-PAK (3 + 8)
Collector- Emitter Voltage Vceo Max
250 V
Continuous Collector Current At 25 C
400 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Lead free / RoHS Compliant
Other names
*GA400TD25S
VS-GA400TD25S
VS-GA400TD25S
VSGA400TD25S
VSGA400TD25S
VS-GA400TD25S
VS-GA400TD25S
VSGA400TD25S
VSGA400TD25S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GA400TD25S
Manufacturer:
SANYO
Quantity:
2 100
Part Number:
GA400TD25S
Quantity:
57
Company:
Part Number:
GA400TD25S-703058
Manufacturer:
SEMIKRON
Quantity:
492
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
60000
50000
40000
30000
20000
10000
60
55
50
45
40
35
30
0
0
V
V
T
Fig. 7 - Typical Capacitance vs.
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 25 C
= 150V
= 15V
= 400A
125°C
R
V
R
G
CE
G
°
10
, Gate Resistance
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
=
=
=
=
0V,
C
C
C
ge
gc
ce
C
C
C
ies
oes
res
20
+ C
+ C
10
f = 1MHz
gc ,
gc
C
ce
30
SHORTED
100
40
1000
100
10
20
16
12
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0
R
R
V
V
V
Fig. 8 - Typical Gate Charge vs.
V CC = 200V
I
GE
CC
G1
G
CC
C
=15 ;R
= 15V
= 150V
= Ohm
= 400V
= 440A
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
Q , Total Gate Charge (nC)
J
400
G
G2
0
GA400TD25S
= 0
20
40
800
60
80 100 120 140 160
1200
I =
I =
I =
C
C
C
°
800
400
200
A
A
A
1600
5