APTGT600U170D4G Microsemi Power Products Group, APTGT600U170D4G Datasheet - Page 5

• Manufacturer Part Number: APTGT600U170D4G
• Description: IGBT TRENCH SGL SWITCH 1700V D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT600U170D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 600A
• Current - Collector (ic) (max): 1100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 51nF @ 25V
• Power - Max: 2900W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
30
25
20
15
10
0.07
0.06
0.05
0.04
0.03
0.02
0.01
5
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.1
hard
0.3
200
ZVS
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.0001
I
C
ZCS
(A)
400
APT website – http://www.advancedpower.com
V
D=50%
R
T
T
CE
G
J
C
=125°C
=75°C
=2.4 Ω
600
=900V
0.001
rectangular Pulse Duration (Seconds)
800
Single Pulse
0.01
1200
1000
APTGT600U170D4G
800
600
400
200
0
0
0.1
Forward Characteristic of diode
T
J
0.5
=125°C
1
T
J
V
=25°C
1.5
F
(V)
1
2
Diode
T
J
=125°C
2.5
10
3
5 - 5