APTGT600U170D4G Microsemi Power Products Group, APTGT600U170D4G Datasheet - Page 4

• Manufacturer Part Number: APTGT600U170D4G
• Description: IGBT TRENCH SGL SWITCH 1700V D4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT600U170D4G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 600A
• Current - Collector (ic) (max): 1100A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 51nF @ 25V
• Power - Max: 2900W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1200
1000
1200
1000
1000
0.05
0.04
0.03
0.02
0.01
800
600
400
200
Switching Energy Losses vs Gate Resistance
800
600
400
200
800
600
400
200
0.00001
0
0
0
0
0
5
0
Output Characteristics (V
V
V
I
T
C
J
CE
GE
= 600A
0.05
0.5
0.3
= 125°C
0.7
0.9
0.1
Transfert Characteristics
= 900V
6
=15V
5
Gate Resistance (ohms)
1
T
J
=25°C
10
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
7
0.0001
V
V
CE
GE
15
T
8
2
APT website – http://www.advancedpower.com
J
(V)
=25°C
(V)
20
9
T
GE
T
Eon
Eoff
J
J
=125°C
Er
3
=15V)
=125°C
rectangular Pulse Duration (Seconds)
0.001
10
25
Single Pulse
30
11
4
0.01
1400
1200
1000
500
400
300
200
100
1200
1000
800
600
400
200
APTGT600U170D4G
800
600
400
200
0
0
0
0
0
0
Reverse Bias Safe Operating Area
Energy losses vs Collector Current
V
V
R
T
V
T
R
J
CE
GE
Er
G
0.1
T
GE
J
G
= 125°C
= 2.4 Ω
=125°C
=2.4 Ω
J
= 900V
= 15V
=15V
= 125°C
200
400
1
Output Characteristics
V
400
GE
800
=19V
I
2
C
V
(A)
V
CE
CE
1
(V)
600
(V)
1200
3
V
V
V
800
IGBT
GE
GE
GE
Eon
=9V
4
=15V
1600
=13V
Eoff
Er
1000
10
5
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