APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 6

• Manufacturer Part Number: APT60GF120JRDQ3
• Description: IGBT 1200V 149A 625W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 100A
• Current - Collector (ic) (max): 149A
• Current - Collector Cutoff (max): 350µA
• Input Capacitance (cies) @ Vce: 7.08nF @ 25V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT60GF120JRDQ3MI; APT60GF120JRDQ3MI

V
CC
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
t
90%
90%
d(off)
t
f
Switching Energy
10%
I
Collector Voltage
Gate Voltage
C
Collector Current
D.U.T.
V
CE
A
0
APT 60GF120JRD
18V
T
J
= 125 C
Switching
Energy
Figure 22, Turn-on Switching Waveforms and Definitions
10%
10%
5%
Figure 24, E ON1 Test Circuit
t
r
V
t
TEST
d(on)
90%
100uH
A
DRIVER*
A
5 %
*DRIVER SAME TYPE AS D.U.T.
Gate Voltage
Collector Current
Collector Voltage
V
CLAMP
APT60GF120JRD
I
C
V
CE
D.U.T.
T
J
= 125 C
B