APT60GF120JRDQ3 Microsemi Power Products Group, APT60GF120JRDQ3 Datasheet - Page 3

IGBT 1200V 149A 625W SOT227

APT60GF120JRDQ3

Manufacturer Part Number
APT60GF120JRDQ3
Description
IGBT 1200V 149A 625W SOT227
Manufacturer
Microsemi Power Products Group

Specifications of APT60GF120JRDQ3

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 100A
Current - Collector (ic) (max)
149A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
7.08nF @ 25V
Power - Max
625W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT60GF120JRDQ3MI
APT60GF120JRDQ3MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT60GF120JRDQ3
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Part Number:
APT60GF120JRDQ3
Quantity:
123
TYPICAL PERFORMANCE CURVES
FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.15
1.05
0.95
0.90
0.85
120
100
350
300
250
200
150
100
3.5
2.5
1.5
0.5
1.2
1.1
1.0
0.8
80
60
40
20
50
0
0
4
3
2
1
0
FIGURE 1, Output Characteristics(V
-50
V
0
0
8
CE
<0.5 % DUTY CYCLE
<0.5 % DUTY CYCLE
250µs PULSE TEST
V
250µs PULSE TEST
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
T
-25
V GE = 15V.
J
, GATE-TO-EMITTER VOLTAGE (V)
2
, GATE-TO-EMITTER VOLTAGE (V)
Graph does not apply
, JUNCTION TEMPERATURE (°C)
T
C
10
T
=125°C
T
1
I
C
C=
C
0
=25°C
=-55°C
30A
4
T J = 25°C
25
T J = 125°C
12
2
6
I
C=
50
T J = -55°C
60A
250µs PULSE TEST
<0.5 % DUTY CYCLE
8
75
14
T J = 25°C.
3
I
C=
10
GE
100
120A
= 15V)
125
16
12
4
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
120
100
160
140
120
100
3.5
2.5
1.5
0.5
80
60
40
20
16
14
12
10
80
60
40
20
0
8
6
4
2
0
4
3
2
1
0
0
FIGURE 2, Output Characteristics (V
-50
-50
V
0
0
CE
250µs PULSE TEST
250µs PULSE TEST
T
<0.5 % DUTY CYCLE
I
<0.5 % DUTY CYCLE
C
J
I
, COLLECTER-TO-EMITTER VOLTAGE (V)
T
= 25°C
C=
= 80A
.5
20
-25
C
V GE = 10V.
V GE = 15V.
-25
=125°C
5T
30A
T
C
T
C
=25°C
T
1
J
40
FIGURE 4, Gate Charge
, CASE TEMPERATURE (°C)
, Junction Temperature (°C)
C
0
=-55°C
0
GATE CHARGE (nC)
1.5
V
60
25
CE
25
2
V
= 600V
CE
80
I
50
C=
2.5
= 240V
50
60A
100 120 140 160
75 100 125 150
3
75
V
CE
3.5
I
= 960V
C=
APT60GF120JRD
100
GE
120A
4
= 10V)
125
4.5

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