APT100GT120JRDL Microsemi Power Products Group, APT100GT120JRDL Datasheet - Page 4

• Manufacturer Part Number: APT100GT120JRDL
• Description: IGBT 1200V 123A 570W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT100GT120JRDL

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 100A
• Current - Collector (ic) (max): 123A
• Current - Collector Cutoff (max): 300µA
• Input Capacitance (cies) @ Vce: 6.7nF @ 25V
• Power - Max: 570W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT100GT120JRDLMI; APT100GT120JRDLMI

Typical Performance Curves
160000
140000
120000
100000
80000
60000
40000
20000
80000
70000
60000
50000
40000
30000
20000
10000
FIGURE 15, Switching Energy Losses vs Gate Resistance
350
300
250
200
150
100
FIGURE 13, Turn-On Energy Loss vs Collector Current
80
70
60
50
40
30
20
10
50
FIGURE 11, Current Rise Time vs Collector Current
0
0
FIGURE 9, Turn-On Delay Time vs Collector Current
0
0
0
0
I
0
0
I
CE
I
CE
V
T
R
L = 100μH
CE
R
V
V
R
V
V
T
J
CE
G
CE
GE
G
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
GE
J
G
, COLLECTOR-TO-EMITTER CURRENT (A)
= 25°C
, COLLECTOR-TO-EMITTER CURRENT (A)
= 125°C
= 4.7Ω
= 4.7Ω
=
= 800V
= 800V
= +15V
= 800V
= +15V
R
4.7Ω, L
40
G
40
40
4
, GATE RESISTANCE (OHMS)
V
,
or 125°C
GE
=
= 15V
100
T
80
80
J
80
8
μ
=
E
H, V
T
125°C
off,
J
200A
=
CE
25 or 125°C,V
120
E
120
120
=
12
on2,
800V
100A
T
J
E
=
on2,
25°C
160
200A
160
160
16
GE
E
E
E
off,
=
on2,
off,
100A
15V
50A
50A
200
200
200
20
FIGURE 16, Switching Energy Losses vs Junction Temperature
18000
16000
14000
12000
10000
80000
70000
60000
50000
40000
30000
20000
10000
8000
6000
4000
2000
120
100
FIGURE 14, Turn-Off Energy Loss vs Collector Current
900
800
700
600
500
400
300
200
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
60
40
20
FIGURE 12, Current Fall Time vs Collector Current
0
0
0
0
I
I
0
I
0
0
0
CE
CE
CE
V
V
R
V
V
R
V
R
L = 100μH
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
, COLLECTOR-TO-EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
V
CE
G
= 4.7Ω
= 4.7Ω
GE
= 800V
= +15V
= 800V
=
= +15V
T
E
=
J
on2,
4.7Ω
=15V,T
40
40
, JUNCTION TEMPERATURE (°C)
800V
40
25
100A
T
J
=
T
J
R
=125°C
J
25°C, V
G
=
80
80
=
80
50
125°C
4.7Ω, L
E
GE
on2,
V
T
GE
J
200A
=
=
120
120
120
APT100GT120JRDL(G)
=
75
=15V,T
15V
125°C, V
100
T
J
μ
=
H, V
J
=25°C
25°C
E
GE
160
off,
100
160
160
CE
100A
E
off,
E
=
E
=
on2,
200A
15V
off,
800V
50A
50A
200
200
200
125