APT45GP120J Microsemi Power Products Group, APT45GP120J Datasheet - Page 5

• Manufacturer Part Number: APT45GP120J
• Description: IGBT 1200V 75A 329W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 3.94nF @ 25V
• Power - Max: 329W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120JMI; APT45GP120JMI

TYPICAL PERFORMANCE CURVES
Case temperature
Junction
temp. ( ”C)
10,000
5,000
1,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
(Watts)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
Power
500
100
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
50
10
V
0
CE
0
10
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
0.05
10
0.9
0.7
0.5
0.3
0.1
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
RC MODEL
20
0.0339
0.0806
0.265
10
-4
30
40
0.000443F
0.0269F
0.608F
SINGLE PULSE
C ies
C oes
C res
10
RECTANGULAR PULSE DURATION (SECONDS)
-3
50
10
-2
180
160
140
120
100
180
160
140
120
Figure 20, Operating Frequency vs Collector Current
Figure 18, Minimim Switching Safe Operating Area
90
10
0
1
10
0 100 200 300 400 500 600 700 800 900 1000
V
T
T
D = 50 %
V
R
10
J
C
CE
CE
G
= 125
= 75
-1
= 5
= 800V
, COLLECTOR TO EMITTER VOLTAGE
20
I
C
°
F
f
f
P
°
C
, COLLECTOR CURRENT (A)
max1
max 2
C
max
diss
Note:
30
Peak T J = P DM x Z JC + T C
min(f
T
t
E
P
R
J
d (on )
diss
Duty Factor D = t 1 / t
on 2
JC
T
max1
C
40
P
E
t 1
t
1.0
cond
0.05
r
, f
off
max 2
t 2
t
d(off )
50
)
2
t
f
60
APT45GP120J
10
70