APT45GP120J Microsemi Power Products Group, APT45GP120J Datasheet - Page 4

• Manufacturer Part Number: APT45GP120J
• Description: IGBT 1200V 75A 329W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120J

• Igbt Type: PT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 500µA
• Input Capacitance (cies) @ Vce: 3.94nF @ 25V
• Power - Max: 329W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120JMI; APT45GP120JMI

TYPICAL PERFORMANCE CURVES
FIGURE 15, Switching Energy Losses vs. Gate Resistance
12000
10000
8000
7000
6000
5000
4000
3000
2000
1000
8000
6000
4000
2000
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
35
30
25
20
15
10
80
70
60
50
40
30
20
10
5
0
0
0
0
10
10
I
I
0
0
CE
CE
I
CE
V
V
T
V
L = 100 µH
R
T
CE
GE
J
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
J
= 125°C
, COLLECTOR TO EMITTER CURRENT (A)
10
E
=125°C,V
20
= 5
20
V
= 600V
= +15V
= 600V
on2
GE
R
10
G
= 10V
90A
20
, GATE RESISTANCE (OHMS)
30
30
T
E
GE
J
off
= 25°C, V
30
=10V
45A
40
40
R
20
G
40
T
=
T
J
T
5 , L
50
GE
=
J
50
J
=125°C, V
V
T
R
L = 100 µH
25 or 125°C,V
=
=10V
50
J
CE
G
T
25 or 125°C,V
= 25°C or 125°C
J
=
= 5
30
= 25°C, V
60
60
= 600V
100
60
µ
GE
H, V
V
70
=15V
70
GE
70
E
E
GE
GE
CE
E
40
off
on2
= 15V
E
off
GE
=15V
=
=
on2
90A
80
80
22.5A
80
15V
22.5A
=
600V
45A
10V
90
90
90
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
6000
5000
4000
3000
2000
1000
8000
7000
6000
5000
4000
3000
2000
1000
FIGURE 14, Turn Off Energy Loss vs Collector Current
180
160
140
120
100
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
80
60
40
20
90
80
70
60
50
40
30
20
10
FIGURE 12, Current Fall Time vs Collector Current
0
0
0
0
10
I
I
0
0
0
CE
CE
I
V
CE
V
V
R
V
L = 100 µH
R
V
R
L = 100 µH
R
GE
CE
GE
G
CE
G
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
T
CE
E
G
G
V
, COLLECTOR TO EMITTER CURRENT (A)
J
= 5
10
= 5
E
GE
20
20
off
=10V,T
= 600V
= 5
= 600V
= +15V
=
=
on2
T
= 600V
5 , L
90A
J
125°C, V
T
=
, JUNCTION TEMPERATURE (°C)
25
J
15V,T
45A
20
=
30
30
T
J
125°C, V
=
=125°C
J
=
100
J
=25°C
30
GE
25°C, V
µ
40
40
H, V
50
=
GE
10V or 15V
T
40
J
CE
GE
=
=
50
50
V
=
10V or 15V
25°C, V
GE
=
50
600V
10V or 15V
V
=
75
GE
10V,T
60
60
60
GE
=
E
15V,T
on2
J
=
=25°C
70
70
10V or 15V
70
90A
100
E
E
E
J
on2
=125°C
off
off
80
80
22.5A
45A
80
22.5A
APT45GP120J
125
90
90
90