STTH20004TV1 STMicroelectronics, STTH20004TV1 Datasheet - Page 4

• Manufacturer Part Number: STTH20004TV1
• Description: DIODE ULT FAST 400V ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH20004TV1

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100A
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Current - Average Rectified (io) (per Diode): 120A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 100ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7587-5; STTH20004TV1

STTH20004TV
Figure 7: Reverse recovery softness factor
versus dI
Figure 9: Transient peak forward voltage
versus dI
Figure
reverse voltage applied (typical values, per
diode)
4/6
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10000
1000
100
0
0
1
T
I
j
F
=125°C
=I
50
50
F(AV)
11:
F
F
/dt (typical values, per diode)
/dt (typical values, per diode)
100
100
Junction
150
150
10
200
200
dI F /dt(A/µs)
dI F /dt(A/µs)
250
250
V R (V)
capacitance
300
300
100
350
350
400
400
V
OSC
F=1MHz
T
I
=30mV
j
F
=25°C
V
T
< 2 x I
j
R
=125°C
450
=200V
450
versus
RMS
F(AV)
1000
500
500
Figure 8: Relative variations of dynamic
parameters versus junction temperature
Figure 10: Forward recovery time versus dI
(typical values, per diode)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1800
1600
1400
1200
1000
800
600
400
200
25
0
0
fr
I
50
RM
t
Q
RR
RR
100
50
150
200
dI F /dt(A/µs)
T j (°C)
S
FACTOR
250
75
300
350
Reference: T
V
100
FR
=1.1 x V
400
V
T
I
I
F
R
F
j
=125°C
=I
=200V
=I
F(AV)
F(AV)
j
=125°C
F
450
max.
F
500
/dt
125