STTH20004TV1 STMicroelectronics, STTH20004TV1 Datasheet - Page 3

DIODE ULT FAST 400V ISOTOP

STTH20004TV1

Manufacturer Part Number
STTH20004TV1
Description
DIODE ULT FAST 400V ISOTOP
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH20004TV1

Voltage - Forward (vf) (max) @ If
1.2V @ 100A
Current - Reverse Leakage @ Vr
100µA @ 400V
Current - Average Rectified (io) (per Diode)
120A
Voltage - Dc Reverse (vr) (max)
400V
Reverse Recovery Time (trr)
100ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
2 Independent
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7587-5
STTH20004TV1

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0
Figure 1: Conduction losses versus average
forward current (per diode)
Figure
impedance junction to case versus pulse
duration
Figure 5: Reverse recovery time versus dI
(typical values, per diode)
180
160
140
120
100
300
250
200
150
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
60
40
20
50
1.E-03
0
0
0
0
rr
Single pulse
10
50
3:
20
100
30
1.E-02
Relative
δ=0.05
40
150
50
200
60
dI F /dt(A/µs)
δ=0.1
70
1.E-01
I F(AV) (A)
variation
250
t P (s)
80
δ=0.2
300
90 100 110 120 130 140 150
350
1.E+00
of
400
δ
δ=0.5
=tp/T
T
V
I
j
F
R
=125°C
thermal
=I
=200V
450
T
F(AV)
δ=1
1.E+01
tp
F
500
/dt
Figure 2: Forward voltage drop versus forward
current (per diode)
Figure 4: Peak reverse recovery current versus
dI
Figure 6: Reverse recovery charges versus
dI
200
180
160
140
120
100
3500
3000
2500
2000
1500
1000
50
45
40
35
30
25
20
15
10
F
500
80
60
40
20
F
5
0
0
/dt (typical values, per diode)
/dt (typical values, per diode)
0
0
0.0
I
0
V
T
I
j
F
R
=125°C
rr
=I
=200V
V
T
50
I
j
F(AV)
F
R
=125°C
=I
=200V
50
F(AV)
0.2
V FM (V)
100
100
(Typical values)
(Typical values)
0.4
150
150
T
T
j
j
=150°C
=150°C
(Maximum values)
(Maximum values)
200
200
T
T
dI F /dt(A/µs)
j
j
=150°C
=150°C
0.6
dI F /dt(A/µs)
250
250
0.8
300
300
STTH20004TV
350
350
1.0
(Maximum values)
400
400
T
1.2
j
=25°C
450
450
500
500
1.4
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