STTH20004TV1 STMicroelectronics, STTH20004TV1 Datasheet - Page 2

• Manufacturer Part Number: STTH20004TV1
• Description: DIODE ULT FAST 400V ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STTH20004TV1

• Voltage - Forward (vf) (max) @ If: 1.2V @ 100A
• Current - Reverse Leakage @ Vr: 100µA @ 400V
• Current - Average Rectified (io) (per Diode): 120A
• Voltage - Dc Reverse (vr) (max): 400V
• Reverse Recovery Time (trr): 100ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7587-5; STTH20004TV1

STTH20004TV
Table 4: Thermal resistance
Table 5: Static electrical characteristics (per diode)
Pulse test:
To evaluate the conduction losses use the following equation: P = 0.8 x I
Table 6: Dynamic characteristics (per diode)
2/6
When diodes 1 and 2 are used simultaneously:
∆
Symbol
Symbol
Symbol
S
R
Tj(diode 1) = P(diode 1) x R
R
V
V
I
factor
I
th(j-c)
RM
t
t
R
th(c)
F
FP
rr
fr
**
*
Reverse recovery
time
Reverse recovery
current
Softness factor
Forward recovery
time
Forward recovery
voltage
Junction to case
Coupling
Reverse leakage current T
Forward voltage drop
* t
** t
Parameter
p
p
= 5 ms,
= 380 µs,
Parameter
δ
< 2%
th(j-c)
δ
< 2%
(Per diode) + P(diode 2) x R
T
T
T
T
T
j
j
j
j
j
= 25 °C
= 125 °C I
= 125 °C I
= 25 °C
= 25 °C
Parameter
T
T
T
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 150 °C
Test conditions
I
I
dI
dI
I
V
I
V
F
F
F
F
F
F
FR
FR
F
F
= 1 A dI
= 1 A dI
= 100 A
= 100 A
= 100 A
= 100 A
/dt = 100 A/µs
/dt = 100 A/µs
Test conditions
= 1.1 x V
= 1.1 x V
th(c)
V
I
F
R
F
= 100 A
F(AV)
F
/dt = 200 A/µs V
= V
/dt = 50 A/µs V
dI
Fmax
Fmax
V
V
dI
F
R
R
RRM
F
/dt = 200 A/µs
+ 0.002 I
/dt = 200 A/µs
= 200 V
= 200 V
Per diode
Total
F
2
Min.
(RMS)
R
R
= 30 V
= 30 V
0.83
Typ
Value (max).
100
0.50
0.30
0.10
Min Typ Max Unit
Max.
1000
100
1.2
1.0
0.4
2.6
75
45
100
800
60
18
°C/W
°C/W
Unit
Unit
µA
V
ns
ns
A
V