SRI512-A3S/1GE STMicroelectronics, SRI512-A3S/1GE Datasheet - Page 18

IC MEMORY 13.56MHZ EEPRM ADH ANT

SRI512-A3S/1GE

Manufacturer Part Number
SRI512-A3S/1GE
Description
IC MEMORY 13.56MHZ EEPRM ADH ANT
Manufacturer
STMicroelectronics
Series
SRI512r
Datasheets

Specifications of SRI512-A3S/1GE

Rf Type
Read / Write
Frequency
13.56MHz
Features
ISO14443-B
Package / Case
38mm x 38mm
Operating Temperature (max)
85C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5535-2
Memory mapping
4.3
18/50
EEPROM area
The 9 blocks between addresses 7 and 15 are EEPROM blocks of 32 bits each (36 Bytes in
total). (See
READ_BLOCK and WRITE_BLOCK commands. The WRITE_BLOCK command for the
EEPROM area always includes an Auto-Erase cycle prior to the Write cycle.
Blocks 7 to 15 can be Write-protected. Write access is controlled by the 9 bits of the
OTP_Lock_Reg located at block address 255 (see
details). Once protected, these blocks (7 to 15) cannot be unprotected
Figure 17. EEPROM (addresses 7 to 15)
Block
Address
10
11
12
13
14
15
7
8
9
Figure 17
b31
MSb
for a map of the area.) These blocks can be accessed using the
b16 b15 b14
32-bit Block
User Area
User Area
User Area
User Area
User Area
User Area
User Area
User Area
User Area
Section 4.4.1: OTP_Lock_Reg
b8 b7
LSb
b0
Description
Lockable
EEPROM
for
SRI512
Ai12383

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