HTMS8201FTB/AF,115 NXP Semiconductors, HTMS8201FTB/AF,115 Datasheet - Page 7

• Manufacturer Part Number: HTMS8201FTB/AF,115
• Description: RFID HTAG ADVANCED SOT1122
• Manufacturer: NXP Semiconductors
• Series: HITAG® µr

Specifications of HTMS8201FTB/AF,115

• Rf Type: Read / Write
• Frequency: 100kHz ~ 150kHz
• Features: ISO/IEC 11784/11785
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935290073115

NXP Semiconductors
6. Mechanical specification
152931
Product data sheet
PUBLIC
6.1.1 Wafer
6.1.2 Wafer backside
6.1.3 Chip dimensions
6.1.4 Passivation on front
6.1 Wafer specification
See
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Designation:
Diameter:
Thickness:
Process:
Batch size:
PGDW:
Material:
Treatment:
Roughness:
Die size without scribe:
Scribe line width:
X-dimension:
Y-dimension:
Number of pads:
Type:
Material:
Thickness:
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die
Rev. 3.1 — 21 January 2010
152931
each wafer is scribed with batch number and
wafer number
200 mm (8”)
150 μm ± 15 μm
CMOS 0.14 µm
25 wafers
91981
Si
ground and stress release
R
550 μm x 550 μm = 302500 μm
15 μm (scribe line width is measured between
nitride edges)
15 μm (scribe line width is measured between
nitride edges)
5
sandwich structure
PE-Nitride (on top)
1.75 μm total thickness of passivation
a
max. 0.5 μm, R
t
max. 5 μm
© NXP B.V. 2010. All rights reserved.
HITAG µ
2
Transponder IC
marking”.
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