HTMS8201FTB/AF,115 NXP Semiconductors, HTMS8201FTB/AF,115 Datasheet - Page 45

• Manufacturer Part Number: HTMS8201FTB/AF,115
• Description: RFID HTAG ADVANCED SOT1122
• Manufacturer: NXP Semiconductors
• Series: HITAG® µr

Specifications of HTMS8201FTB/AF,115

• Rf Type: Read / Write
• Frequency: 100kHz ~ 150kHz
• Features: ISO/IEC 11784/11785
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 935290073115

NXP Semiconductors
16. Limiting values
Table 45.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
17. Characteristics
Table 46.
[1]
[2]
[3]
[4]
152931
Product data sheet
PUBLIC
Symbol
T
V
I
Tj
Symbol
f
V
I
C
C
i(max)
oper
I
stg
ESD
IN1-IN2
i
i
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical
Characteristics section of this specification is not implied.
This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static
charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated
maxima
Typical ratings are not guaranteed. Values are at 25 ° C
Measured with an HP4285A LCR meter at 125 kHz/room temperature (25 ° C)
Integrated Resonance Capacitor: 210pF ± 3%
Integrated Resonance Capacitor: 280pF ± 5%
Limiting values
Characteristics
Parameter
storage temperature
electrostatic discharge voltage
maximum input current
junction temperature
Parameter
operating frequency
input voltage
input current
input capacitance between
IN1-IN2
input capacitance between
IN1-IN2
[1][2]
Conditions
IN1-IN2
V
V
IN1-IN2
IN1-IN2
Rev. 3.1 — 21 January 2010
Conditions
JEDEC JESD 22-A114-AB
Human Body Model
IN1-IN2
.
= 0.5 V
= 0.5 V
152931
rms
rms
[2][3]
[2][4]
Min
100
4
-
203.7
266
Min
−55
±2
−
−40
Typ
125
5
-
210
280
Max
150
6
±10
216.3
294
Max
+125
-
±20
+85
© NXP B.V. 2010. All rights reserved.
HITAG µ
Transponder IC
Unit
kHz
V
mA
pF
pF
peak
Unit
°C
kV
mA
°C
45 of 58
peak
peak