HTMS8001FTB/AF,115 NXP Semiconductors, HTMS8001FTB/AF,115 Datasheet - Page 8

• Manufacturer Part Number: HTMS8001FTB/AF,115
• Description: RFID HTAG ADVANCED SOT1122
• Manufacturer: NXP Semiconductors
• Series: HITAG® µr

Specifications of HTMS8001FTB/AF,115

• Rf Type: Read / Write
• Frequency: 100kHz ~ 150kHz
• Features: ISO/IEC 11784/11785
• Package / Case: *
• Operating Temperature Range: + 85 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 935290071115

NXP Semiconductors
152931
Product data sheet
PUBLIC
6.1.5 Au bump
6.1.6 Fail die identification
6.1.7 Map file distribution
No inkdots are applied to the wafer.
Electronic wafer mapping (SECS II format) covers the electrical test results and
additionally the results of mechanical/visual inspection.
See
See
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Bump material:
Bump hardness:
Bump shear strength:
Bump height:
Bump height uniformity:
– within a die:
– within a wafer:
– wafer to wafer:
Bump flatness:
Bump size:
– LA, LB
– TEST, GND, VDD
– Bump size variation:
Under bump metallization:
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die
Rev. 3.1 — 21 January 2010
152931
> 99.9% pure Au
35 – 80 HV 0.005
> 70 MPa
18 μm
± 2 μm
± 3 μm
± 4 μm
± 1.5 μm
294 x 164 μm
60 x 60 μm
± 5 μm
sputtered TiW
© NXP B.V. 2010. All rights reserved.
HITAG µ
Transponder IC
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