HTMS8001FTB/AF,115 NXP Semiconductors, HTMS8001FTB/AF,115 Datasheet - Page 19

• Manufacturer Part Number: HTMS8001FTB/AF,115
• Description: RFID HTAG ADVANCED SOT1122
• Manufacturer: NXP Semiconductors
• Series: HITAG® µr

Specifications of HTMS8001FTB/AF,115

• Rf Type: Read / Write
• Frequency: 100kHz ~ 150kHz
• Features: ISO/IEC 11784/11785
• Package / Case: *
• Operating Temperature Range: + 85 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 935290071115

NXP Semiconductors
152931
Product data sheet
PUBLIC
9.3.3 RWD - Start of frame pattern
9.3.4 RWD - End of frame pattern
The RWD requests in the data exchange mode always a start with a SOF pattern for ease
of synchronization. The SOF pattern consists of an encoded data bit ’0’ and a ’code
violation’.
The HITAG µ advanced/advanced+ is ready to receive a SOF from the RWD within
1.2 ms after having sent a response to the RWD.
The HITAG µ advanced/advanced+ is ready to receive a SOF or switch command from
the RWD within 2.33 ms after the RWD has established the powering field.
For slot switching during a multi-slot anticollision sequence, the RWD request is an EOF
pattern. The EOF pattern is represented by a RWD ’Stop condition’.
Fig 8.
Fig 9.
Start of frame pattern
End of frame pattern
carrier on
carrier off
carrier on
carrier off
T
F1
Rev. 3.1 — 21 January 2010
T
F1
data "0"
T
Fd0
152931
T
F1
T
"stop condition''
FpSOF
T
FpEOF
T
Fsc
"code violation"
T
Fcv
001aaj829
© NXP B.V. 2010. All rights reserved.
HITAG µ
T
Transponder IC
001aaj828
F1
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