MCP2030-I/ST Microchip Technology, MCP2030-I/ST Datasheet - Page 6

• Manufacturer Part Number: MCP2030-I/ST
• Description: IC KEYLESS ENTRY AFE 14TSSOP
• Manufacturer: Microchip Technology

Specifications of MCP2030-I/ST

• Rf Type: ISM
• Frequency: 125kHz
• Features: 10kbps
• Package / Case: 14-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

MCP2030
AC Characteristics (Continued)
SPI Timing
DS21981A-page 6
Electrical Specifications: Standard Operating Conditions (unless otherwise stated)
Supply Voltage
Operating temperature
LCCOM connected to V
LC Signal Input
Carrier Frequency
LCCOM connected to V
RSSI current output
RSSI current linearity
Note
Electrical Specifications: Standard Operating Conditions (unless otherwise stated)
Supply Voltage
Operating temperature
LC Signal Input
Carrier Frequency
LCCOM connected to V
SCLK Frequency
CS fall to first SCLK edge setup time
SDI setup time
SDI hold time
SCLK high time
SCLK low time
SDO setup time
SCLK last edge to CS rise setup time
CS high time
CS rise to SCLK edge setup time
SCLK edge to CS fall setup time
Rise time of SPI data
(SPI Read command)
Fall time of SPI data
(SPI Read command)
1:
2:
*
†
†
Parameter is characterized but not tested.
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Required output enable filter high time must account for input path analog delays (= T
Required output enable filter low time must account for input path analog delays (= T
Data in “Typ” column is at 3.0V, 25°C unless otherwise stated. These parameters are for design guidance only and are not tested.
Parameters
Parameters
SS
SS
SS
2.0V
-40°C
Sinusoidal 300 mV
125 kHz
2.0V
-40°C
Sinusoidal 300 mV
125 kHz
V
V
T
T
DD
DD
A
A
ILR
F
T
T
Sym.
TR
I
Sym.
TF
T
+85°C
+85°C
T
T
3.6V
RSSI
3.6V
T
T
T
T
CSSC
SCCS
SCLK
T
CSH
CS1
CS0
RSSI
SU
HD
DO
LO
HI
SPI
SPI
PP
PP
Min.
100
150
150
100
500
—
30
50
—
50
50
—
—
Min.
-15
—
—
6
Typ†
Typ†
0.65
100
10
10
—
—
—
—
—
—
—
—
—
—
—
12
—
Max.
Max.
20.3
150
—
—
—
—
—
—
—
—
—
—
—
—
15
3
2
Units
MHz
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
%
A
A
A
OEL
OEH
+ T
SCLK edge when CS is high
V
90% of amplitude
V
10% of amplitude
V
V
V
Linearly increases with input signal ampli-
tude.
Tested at V
370 mV
Tested at room temperature only (see
Equation 5-1 and Figure 5-7 for test method).
- T
DD
DD
IN
IN
DD
DR
DR
= 37 mV
= 370 mV
= 3.0V, V
- T
3.0V. Time is measured from 10% to
3.0V. Time is measured from 90% to
+ T
© 2005 Microchip Technology Inc.
PP
DF
DF
).
at +25ºC.
IN
).
PP
PP
= 37 mV
IN
Conditions
= 0 to 4 V
Conditions
PP
, 100 mV
PP
PP
, and