MW7IC18100NR1 Freescale Semiconductor, MW7IC18100NR1 Datasheet - Page 9

• Manufacturer Part Number: MW7IC18100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC18100NR1

• Current - Supply: 1.18A
• Frequency: 1.805GHz ~ 2.05GHz
• Gain: 30dB
• P1db: 51.93dBm
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Test Frequency: 1.9GHz
• Voltage - Supply: 24 ~ 32V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 2.05GHz
• Operating Supply Voltage (min): 24V
• Operating Supply Voltage (typ): 28V
• Operating Supply Voltage (max): 32V
• Package Type: TO-270 WB EP
• Mounting: Surface Mount
• Pin Count: 14
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

RF Device Data
Freescale Semiconductor
32
28
24
20
16
12
1400
Figure 21. Broadband Frequency Response
V
I
DQ1
1600
DD
= 28 Vdc
= 180 mA, I
1800
f, FREQUENCY (MHz)
DQ2
S21
= 1000 mA
2000
S11
10
10
10
10
10
TYPICAL CHARACTERISTICS — 1900 MHz
9
8
7
6
5
2200
90
Figure 23. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
110
2400
2nd Stage
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
2600
150
0
−5
−10
−15
−20
−25
1st Stage
out
170
= 100 W CW, and PAE = 48%.
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
36
35
34
33
32
31
30
29
190
1880
Figure 22. Power Gain versus Frequency
210
1900
1920
230
25_C
85_C
T
C
= −30_C
1940
f, FREQUENCY (MHz)
250
1960
V
I
DQ1
DD
1980
= 28 Vdc, P
= 180 mA, I
2000
out
DQ2
= 40 W Avg.
= 1000 mA
2020
2040
9