MW7IC18100NR1 Freescale Semiconductor, MW7IC18100NR1 Datasheet
MW7IC18100NR1
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MW7IC18100NR1 Summary of contents
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... I = 1000 mA, DQ1 DQ2 = 28 Volts 215 mA DQ1 DQ2 RF /V out DS2 (1) MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 Document Number: MW7IC18100N Rev. 3, 3/2009 MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 1990 MHz, 100 GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1618 - 270 PLASTIC MW7IC18100NR1 CASE 1621 - 270 GULL ...
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 4. Measurement made with device in straight lead configuration before any lead forming operation is applied. MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 2 Stage 1, 28 Vdc 180 mA DQ1 ...
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... C Symbol = 28 Vdc 180 mA DQ1 = 100 out F Φ Delay = 100 W CW, ΔΦ out ΔG ΔP1dB MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 Min Typ Max Unit = 1000 mA, 1930-1990 MHz Bandwidth DQ2 — 0.37 — dB — 0.502 — ° — 2.57 — ...
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... Z8, Z9 0.080″ x 1.569″ Microstrip Z10 0.880″ x 0.224″ Microstrip Figure 3. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Schematic — 1900 MHz Table 6. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1900 MHz Part C1, C2, C3, C4, C5 6.8 pF Chip Capacitors C6, C7, C8 μ ...
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... C10 C11 MW7IC18100N Rev Figure 4. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1900 MHz RF Device Data Freescale Semiconductor C1 C12 C13 C2 C16 MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 C17 C15 C5 C14 ...
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... Vdc 180 DQ1 f = 1960 MHz OUTPUT POWER (WATTS) CW out Figure 7. Two - Tone Power Gain versus Output Power @ I DQ1 MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 6 PAE Vdc 100 out I = 180 mA 1000 mA DQ1 DQ2 IRL 1900 1920 1940 1960 1980 2000 f, FREQUENCY (MHz) ...
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... Ideal Actual = 1000 mA 15 DQ2 PAE Figure 14. Power Gain and Power Added Efficiency versus Output Power MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 = 1000 mA DQ2 DQ1 135 mA 180 mA 225 mA 270 mA 10 100 P , OUTPUT POWER (WATTS) PEP out = 1000 mA DQ2 = 80 W (PEP 215 mA out DQ1 IM3−U IM3− ...
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... Vdc DD1 I = 215 mA 800 mA DQ1 DQ2 f = 1960 MHz, EDGE Modulation −60 −70 −80 − OUTPUT POWER (WATTS) AVG. out Figure 19. Spectral Regrowth at 600 kHz versus Output Power MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 180 mA DQ1 V DD1 I = 1000 mA DQ2 I DQ1 f = 1960 MHz 4 EDGE Modulation Avg ...
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... This above graph displays calculated MTTF in hours when the device is operated Vdc 100 W CW, and PAE = 48%. DD out MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 23. MTTF versus Junction Temperature MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 T = −30_C C 25_C Vdc Avg. DD out ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 10 GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz Center 1.96 GHz 200 kHz Figure 24. EDGE Spectrum 400 kHz 600 kHz ...
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... Z = Device input impedance as measured from in gate to ground Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network load MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 f = 1880 MHz in = 100 W CW out load W 11 ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 180 mA 1000 mA DQ1 DQ2 ∠ φ 6.369 69.06 0.002 11.42 18.29 0.003 16. ...
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... INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V Test Impedances per Compression Level Z source Ω P3dB 40.2 - j30.91 0.96 - j3.14 Figure 26. Pulsed CW Output Power versus Input Power @ 28 V MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 Ideal Actual = 180 mA DQ1 load Ω 13 ...
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... Z8, Z9 0.080″ x 1.569″ Microstrip Z10 0.880″ x 0.224″ Microstrip Figure 27. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Schematic — 1800 MHz Table 8. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Designations and Values — 1800 MHz Part C1, C2, C3, C4, C5 6.8 pF Chip Capacitors C6, C7, C8 μ ...
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... C10 C11 MW7IC18100N Rev Figure 28. MW7IC18100NR1(GNR1)(NBR1) Test Circuit Component Layout — 1800 MHz RF Device Data Freescale Semiconductor C1 C12 C13 C2 C16 MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 C17 C14 C5 C15 ...
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... Vdc 180 DQ1 f = 1840 MHz OUTPUT POWER (WATTS) CW out Figure 31. Two - Tone Power Gain versus Output Power @ I DQ1 MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 16 PAE Vdc 100 W CW DD1 out I = 180 mA 1000 mA DQ1 DQ2 IRL 1780 1800 1820 1840 1860 1880 1900 ...
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... Ideal Actual = 1000 mA 15 DQ2 PAE Figure 38. Power Gain and Power Added Efficiency versus Output Power MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 = 1000 mA DQ2 DQ1 270 mA 135 mA 180 mA 225 mA 10 100 P , OUTPUT POWER (WATTS) PEP out = 1000 mA DQ2 = 28 Vdc (PEP 180 mA out DQ1 = 1000 mA, Two− ...
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... Vdc DD1 I = 215 mA 800 mA DQ1 DQ2 f = 1840 MHz, EDGE Modulation −60 −70 −80 − OUTPUT POWER (WATTS) AVG. out Figure 43. Spectral Regrowth at 600 kHz versus Output Power MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 180 mA DQ1 I = 1000 mA DQ2 f = 1840 MHz Avg 150 200 1760 1780 1800 Figure 40 ...
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... TYPICAL CHARACTERISTICS — 1800 MHz 1760 1780 1800 RF Device Data Freescale Semiconductor T = −30_C C 25_C Vdc Avg. DD out I = 180 mA, I DQ1 DQ2 85_C 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) Figure 45. Power Gain versus Frequency MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 = 1000 mA 1920 1940 19 ...
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... MHz f = 1760 MHz V DD1 Figure 46. Series Equivalent Input and Load Impedance — 1800 MHz MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 1760 MHz = 75 Ω load f = 1920 MHz = Vdc 180 mA 1000 mA, P DD2 DQ1 DQ2 MHz W 1760 71.78 + j40.05 2.983 - j3.974 1780 79.83 + j31.13 2.872 - j3.861 1800 84 ...
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... INPUT POWER (dBm) in NOTE: Load Pull Test Fixture Tuned for Peak Output Power @ 28 V Test Impedances per Compression Level Z source Ω P3dB 83.04 - j2.44 1.36 - j3.19 Figure 47. Pulsed CW Output Power versus Input Power @ 28 V MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 Ideal Actual = 180 mA DQ1 load Ω 21 ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 22 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 23 ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 24 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 25 ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 26 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 27 ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 28 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 29 ...
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... MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 30 RF Device Data Freescale Semiconductor ...
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... Updated Human Body Model ESD from Class reflect 2008 Human Body Model actual test data • Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 31 ...
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... P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 Document Number: MW7IC18100N Rev. 3, 3/2009 32 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...