MW7IC18100NR1 Freescale Semiconductor, MW7IC18100NR1 Datasheet - Page 2

• Manufacturer Part Number: MW7IC18100NR1
• Description: IC PWR AMP RF LDMOS TO270-14
• Manufacturer: Freescale Semiconductor

Specifications of MW7IC18100NR1

• Current - Supply: 1.18A
• Frequency: 1.805GHz ~ 2.05GHz
• Gain: 30dB
• P1db: 51.93dBm
• Package / Case: TO-270-14
• Rf Type: GSM, EDGE
• Test Frequency: 1.9GHz
• Voltage - Supply: 24 ~ 32V
• Manufacturer's Type: Power Amplifier
• Number Of Channels: 1
• Frequency (max): 2.05GHz
• Operating Supply Voltage (min): 24V
• Operating Supply Voltage (typ): 28V
• Operating Supply Voltage (max): 32V
• Package Type: TO-270 WB EP
• Mounting: Surface Mount
• Pin Count: 14
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

2
MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Functional Tests
f = 1990 MHz.
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) V
P
out
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Power Gain
Input Return Loss
Power Added Efficiency
P
Power Gain
Power Added Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
out
GSM Application
(P
= 40 W Avg., 1805 - 1880 MHz or 1930 - 1990 MHz EDGE Modulation.
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
@ 1 dB Compression Point, CW
= 100 W CW)
(4)
(In Freescale Test Fixture, 50 ohm system) V
Test Methodology
Characteristic
Test Methodology
Characteristic
(1,2)
Rating
(T
C
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 25°C unless otherwise noted)
DQ1
DQ2
DD
= 180 mA
= 1000 mA
= 28 Vdc, P
Symbol
Rating
out
P1dB
EVM
PAE
PAE
SR1
SR2
G
G
IRL
3
ps
ps
= 100 W CW, I
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
Min
100
Package Peak Temperature
DD
27
—
45
—
—
—
—
—
DQ1
= 28 Vdc, I
= 180 mA, I
III (Minimum)
A (Minimum)
1 (Minimum)
260
Typ
112
- 15
- 63
- 80
1.5
30
48
31
35
DQ1
- 65 to +150
Value
Class
- 0.5, +65
- 0.5, +6
Value
0.51
150
225
2.0
= 215 mA, I
DQ2
Freescale Semiconductor
(2,3)
= 1000 mA,
Max
- 10
31
—
—
—
—
—
—
—
RF Device Data
DQ2
= 800 mA,
(continued)
°C/W
% rms
Unit
Unit
Vdc
Vdc
Unit
Unit
dBc
dBc
°C
°C
°C
dB
dB
dB
°C
W
%
%