MCF5274CVM166 Freescale Semiconductor, MCF5274CVM166 Datasheet - Page 20

IC MPU 32BIT 166MHZ 256-MAPBGA

MCF5274CVM166

Manufacturer Part Number
MCF5274CVM166
Description
IC MPU 32BIT 166MHZ 256-MAPBGA
Manufacturer
Freescale Semiconductor
Series
MCF527xr
Datasheet

Specifications of MCF5274CVM166

Core Processor
Coldfire V2
Core Size
32-Bit
Speed
166MHz
Connectivity
EBI/EMI, Ethernet, I²C, SPI, UART/USART, USB
Peripherals
DMA, WDT
Number Of I /o
69
Program Memory Type
ROMless
Ram Size
64K x 8
Voltage - Supply (vcc/vdd)
1.4 V ~ 1.6 V
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
256-MAPBGA
Embedded Interface Type
I2C, SPI, USB, UART
Digital Ic Case Style
BGA
No. Of Pins
256
Operating Temperature Range
-40°C To +85°C
Processor Type
68K/ColdFire V2
Rohs Compliant
Yes
Family Name
MCF5xxx
Device Core
ColdFire
Device Core Size
32b
Frequency (max)
166MHz
Instruction Set Architecture
RISC
Operating Supply Voltage (max)
1.6V
Operating Supply Voltage (min)
1.4V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
256
Package Type
MA-BGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Data Converters
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCF5274CVM166
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MCF5274CVM166
Quantity:
450
Electrical Characteristics
8.3
20
For most applications P
neglected) is:
Solving equations 1 and 2 for K gives:
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring P
equilibrium) for a known T
and (2) iteratively for any value of T
ESD Protection
1
2
Characteristics
ESD Target for Human Body Model
ESD Target for Machine Model
HBM Circuit Description
MM Circuit Description
Number of pulses per pin (HBM)
Number of pulses per pin (MM)
Interval of Pulses
P
P
INT
I/O
positive pulses
negative pulses
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the
device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
positive pulses
negative pulses
MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 4
= I
= Power Dissipation on Input and Output Pins — User Determined
I/O
DD
K = P
A
< P
. Using this value of K, the values of P
× V
INT
D
DD
Table 9. ESD Protection Characteristics
× (T
, Watts - Chip Internal Power
and can be ignored. An approximate relationship between P
A
A
.
+ 273 °C) + Θ
P
D
=
K
÷
(
T
J
JMA
+
273°C
× P
D
)
2
D
(2)
(3)
and T
Symbol
R
R
HBM
MM
series
series
C
C
J
can be obtained by solving equations (1)
1, 2
Value
2000
1500
200
100
200
0
1
1
3
3
1
D
Freescale Semiconductor
and T
Units
sec
pF
pF
V
V
Ω
Ω
J
(if P
I/O
D
is
(at

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