NTD6415ANLT4G ON Semiconductor, NTD6415ANLT4G Datasheet - Page 5

• Manufacturer Part Number: NTD6415ANLT4G
• Description: MOSFET N-CH 100V 23A 56MOHM DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD6415ANLT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1024pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 mOhms to 52 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 92 V to 100 V
• Continuous Drain Current: 1 uA to 100 uA
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant

NTD6415ANL
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Duty Cycle = 0.5
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SINGLE PULSE
0.001
0.000001
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t, PULSE TIME (s)
Figure 13. Thermal Response
http://onsemi.com
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