NTD6415ANLT4G ON Semiconductor, NTD6415ANLT4G Datasheet - Page 2

• Manufacturer Part Number: NTD6415ANLT4G
• Description: MOSFET N-CH 100V 23A 56MOHM DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD6415ANLT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1024pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 mOhms to 52 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 92 V to 100 V
• Continuous Drain Current: 1 uA to 100 uA
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant

2. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.
3. Switching characteristics are independent of operating junction temperatures.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 3)
DRAIN- -SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
ORDERING INFORMATION
Specification Brochure, BRD8011/D.
NTD6415ANLT4G
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Drain--to--Source On--Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
Coefficient
Parameter
Device
V
V
(T
V
(BR)DSS
Symbol
Q
Q
V
GS(TH)
R
Q
(BR)DSS
J
C
C
GS(TH)
C
t
t
I
I
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
V
g
d(on)
d(off)
G(TH)
t
DSS
GSS
OSS
T
= 25C unless otherwise noted)
RSS
RR
T
ISS
t
FS
GD
t
SD
GS
RR
r
f
a
b
/T
/T
J
J
V
V
V
V
V
http://onsemi.com
GS
GS
GS
GS
GS
V
V
GS
= 0 V, I
= 0 V, f = 1.0 MHz, V
V
= 4.5 V, V
V
V
= 10 V, V
= 0 V, I
V
DS
(Pb--Free)
V
V
Package
GS
V
GS
DS
V
I
GS
D
GS
GS
= 0 V, dI
DPAK
DS
GS
= 100 V
= 23 A, R
Test Condition
= 0 V,
= 0 V, V
= 4.5 V, V
= V
= 0 V, I
= 4.5 V, I
= 5.0 V, I
= 10 V, I
2
D
S
I
= 250 mA, T
S
DS
= 23 A
DS
DS
= 23 A
S
, I
/dt = 100 A/ms,
GS
= 80 V, I
D
= 80 V, I
D
G
DD
D
= 250 mA
D
D
= 250 mA
= 6.1 Ω
= 20 V
= 10 A
= 10 A
= 10 A
= 80 V,
T
T
J
T
T
DS
J
D
J
D
J
J
= --40C
= 125C
= 125C
= 23 A
= 25C
= 25C
= 23 A
= 25 V
Min
100
1.0
92
2500 / Tape & Reel
Shipping
1024
0.87
0.74
Typ
156
152
115
4.8
1.1
3.1
44
43
24
70
20
14
35
11
91
40
71
64
40
24
†
100
Max
100
1.0
2.0
1.2
56
52
mV/C
mV/C
Unit
mΩ
mA
nA
nC
nC
nC
pF
ns
ns
V
V
S
V