NTD6415ANLT4G ON Semiconductor, NTD6415ANLT4G Datasheet - Page 3

• Manufacturer Part Number: NTD6415ANLT4G
• Description: MOSFET N-CH 100V 23A 56MOHM DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD6415ANLT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1024pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 mOhms to 52 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 92 V to 100 V
• Continuous Drain Current: 1 uA to 100 uA
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant

0.050
0.048
0.046
0.044
0.042
0.040
3.0
2.5
2.0
1.5
1.0
0.5
45
40
35
30
25
20
15
10
5
0
--50
0
2
V
Figure 3. On- -Region versus Gate Voltage
I
GS
Figure 5. On- -Resistance Variation with
--25
D
Figure 1. On- -Region Characteristics
3
= 23 A
V
V
= 4.5 V
DS
GS
T
5 V
1
J
, DRAIN--TO--SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (C)
, GATE--TO--SOURCE VOLTAGE (V)
V
4
GS
= 10 V
25
Temperature
5
2
50
6
4 V
75
3
7
100
8
125
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
T
T
I
4
J
D
J
http://onsemi.com
= 25C
= 23 A
= 25C
9
150
10
175
5
3
10000
0.050
0.048
0.046
0.044
0.042
0.040
1000
100
45
40
35
30
25
20
15
10
5
0
5
10
1
T
V
Figure 6. Drain- -to- -Source Leakage Current
J
DS
V
= 25C
GS
Figure 4. On- -Resistance versus Drain
20
≥ 10 V
V
V
Figure 2. Transfer Characteristics
= 0 V
DS
GS
, DRAIN--TO--SOURCE VOLTAGE (V)
30
, GATE--TO--SOURCE VOLTAGE (V)
10
Current and Gate Voltage
I
D
, DRAIN CURRENT (A)
40
2
T
versus Voltage
J
= 125C
T
T
V
J
J
GS
50
= 150C
= 125C
15
= 4.5 V
V
60
GS
= 10 V
T
70
3
J
= --55C
20
80
T
J
= 25C
90 100
25
4