NTD6415ANLT4G ON Semiconductor, NTD6415ANLT4G Datasheet - Page 4

• Manufacturer Part Number: NTD6415ANLT4G
• Description: MOSFET N-CH 100V 23A 56MOHM DPAK
• Manufacturer: ON Semiconductor

Specifications of NTD6415ANLT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1024pF @ 25V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 44 mOhms to 52 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 92 V to 100 V
• Continuous Drain Current: 1 uA to 100 uA
• Power Dissipation: 83 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS non-compliant

2500
2000
1500
1000
1000
500
100
100
0.1
10
10
0
1
1
0
1
1
V
Figure 9. Resistive Switching Time Variation
V
Figure 11. Maximum Rated Forward Biased
V
SINGLE PULSE
T
I
GS
DS
D
C
GS
10
= 23 A
= 25C
= 4.5 V
= 80 V
V
V
= 10 V
DS
DS
Figure 7. Capacitance Variation
C
20
rss
, DRAIN--TO--SOURCE VOLTAGE (V)
, DRAIN--TO--SOURCE VOLTAGE (V)
R
versus Gate Resistance
t
G
f
R
THERMAL LIMIT
PACKAGE LIMIT
30
Safe Operating Area
, GATE RESISTANCE (Ω)
DS(on)
10
t
d(off)
40
t
r
t
LIMIT
C
d(on)
iss
C
10
50
oss
60
100
70
10 ms
100 ms
1 ms
10 ms
dc
T
V
80
J
GS
= 25C
= 0 V
http://onsemi.com
90
1000
100
100
4
125
100
10
25
20
15
10
75
50
25
8
6
4
2
0
5
0
0
25
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
0
Drain- -to- -Source Voltage versus Total Charge
Figure 12. Maximum Avalanche Energy versus
Q
ds
V
T
Figure 10. Diode Forward Voltage versus
J
GS
Figure 8. Gate- -to- -Source Voltage and
= 25C
T
5
V
J
= 0 V
50
, STARTING JUNCTION TEMPERATURE
SD
Starting Junction Temperature
, SOURCE--TO--DRAIN VOLTAGE (V)
Q
g
Q
, TOTAL GATE CHARGE (nC)
10
gs
75
15
Current
Q
100
T
20
125
25
V
T
I
DS
D
J
I
D
= 23 A
= 25C
150
= 80 V
= 23 A
30
175
35