STD7N52DK3 STMicroelectronics, STD7N52DK3 Datasheet - Page 8

• Manufacturer Part Number: STD7N52DK3
• Description: MOSFET N-CH 620V 6.2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STD7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10707-2

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
V
GS(th)
1.00
0.80
0.70
(norm)
1.10
0.90
(V)
(mJ)
V
E
0.7
0.6
0.5
0.8
0.4
1.0
0.9
110
100
SD
AS
-75
80
70
60
30
20
10
90
50
40
0
0
0
vs temperature
characteristics
starting Tj
T
J
=25°C
20
10
-25
40
20
25
60
30
V
I
DD
D
80
=3 A
75
T
=50 V
J
=-50°C
T
40
100
J
=150°C
125
120 140
50
I
SD
Doc ID 16387 Rev 2
AM07194v1
AM07198v1
AM07197v1
T
(A)
J
(°C)
T
J
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
(norm)
(norm)
R
BV
STD7N52DK3, STF7N52DK3, STP7N52DK3
DS(on)
1.05
1.00
1.10
0.90
0.95
0.5
DSS
0.0
1.0
2.5
2.0
1.5
-75
-75
temperature
-25
-25
25
25
VDSS
75
75
vs temperature
125
125
AM07195v1
AM07196v1
T
T
J
J
(°C)
(°C)