STD7N52DK3 STMicroelectronics, STD7N52DK3 Datasheet - Page 6

• Manufacturer Part Number: STD7N52DK3
• Description: MOSFET N-CH 620V 6.2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STD7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10707-2

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for DPAK
Safe operating area for TO-220FP
Safe operating area for TO-220
1
1
1
10
10
10
Tc=25°C
Tj=150°C
Single pulse
Tj=150°C
Tc=25°C
Tc=25°C
Single pulse
Tj=150°C
Single pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 16387 Rev 2
100µs
100µs
100µs
AM07185v1
10µs
1ms
10ms
AM07186v1
10µs
1ms
10ms
AM07187v1
10µs
1ms
10ms
Figure 3.
Figure 5.
Figure 7.
STD7N52DK3, STF7N52DK3, STP7N52DK3
Thermal impedance for DPAK
Thermal impedance for TO-220FP
Thermal impedance for TO-220