STD7N52DK3 STMicroelectronics, STD7N52DK3 Datasheet - Page 4

• Manufacturer Part Number: STD7N52DK3
• Description: MOSFET N-CH 620V 6.2A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperFREDmesh3™r

Specifications of STD7N52DK3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.15 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 525V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 33nC @ 10V
• Input Capacitance (ciss) @ Vds: 870pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.15 Ohms
• Forward Transconductance Gfs (max / Min): 1.5 V
• Drain-source Breakdown Voltage: 620 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 34 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10707-2

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
1. C
2. C
V
Symbol
Symbol
C
C
R
C
V
(BR)DSS
when V
C
C
o(er)
I
I
C
DS(on)
C
o(tr)
Q
GS(th)
Q
= 25 °C unless otherwise specified)
GSS
R
DSS
Q
oss eq.
oss eq.
oss
oss
rss
iss
gs
gd
G
g
(1)
(2)
when V
DS
time related is defined as a constant equivalent capacitance giving the same charging time as C
energy related is defined as a constant equivalent capacitance giving the same stored energy as
increases from 0 to 80% V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent
capacitance time
related
Equivalent
capacitance energy
related
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
DS
increases from 0 to 80% V
Parameter
Parameter
DS
= 0)
GS
= 0)
Doc ID 16387 Rev 2
DSS
V
V
V
f = 1 MHz open drain
V
V
(see
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
DSS
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 525 V, V
= 10 V
= ± 20 V
= V
= 10 V, I
= 420 V, I
Figure 20
Test conditions
Test conditions
GS
, I
GS
D
D
STD7N52DK3, STF7N52DK3, STP7N52DK3
D
= 50 µA
)
= 3 A
= 0
= 6 A,
GS
C
=125 °C
= 0
Min.
Min.
525
3
-
-
-
-
-
Typ.
Typ.
3.75
0.95
870
3.5
70
13
53
74
33
19
5
Max.
Max.
± 10
1.15
4.5
50
1
-
-
-
-
-
oss
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
pF
V
V
Ω
Ω