SIR882DP-T1-GE3 Vishay, SIR882DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR882DP-T1-GE3
• Description: MOSFET N-CH 100V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR882DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 1930pF @ 50V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 7100µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR882DP-T1-GE3TR

SiR882DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
www.vishay.com/ppg?65932.
0.1
Duty Cycle = 0.5
0.2
Duty Cycle = 0.5
0.1
0.02
0.05
0.2
Single Pulse
10
0.02
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
Single Pulse
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
10
-1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
S10-2681-Rev. B, 22-Nov-10
= P
t
100
2
Document Number: 65932
DM
Z
thJA
t
t
thJA
1
2
(t)
= 65 °C/W
1000
1