sir882dp Vishay, sir882dp Datasheet

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sir882dp

Manufacturer Part Number
sir882dp
Description
N-channel 100 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIR882DP
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SIR882DP
Quantity:
70 000
Part Number:
sir882dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
sir882dp-T1-GE3
Quantity:
70 000
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
Ordering Information: SiR882DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
100
(V)
8
6.15 mm
D
7
D
6
0.0094 at V
0.0115 at V
0.0087 at V
D
PowerPAK
5
Bottom View
R
D
DS(on)
GS
GS
GS
1
®
()
J
S
= 7.5 V
= 4.5 V
= 10 V
SO-8
= 150 °C)
b, f
2
S
N-Channel 100 V (D-S) MOSFET
3
S
5.15 mm
4
G
I
D
60
60
60
(A)
a
d, e
A
Q
= 25 °C, unless otherwise noted)
18.3 nC
Steady State
g
L =0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t  10 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
DS
GS
D
S
AS
D
stg
g
Tested
®
Power MOSFET
Typical
1.0
18
- 55 to 150
17.6
13.9
4.9
5.4
3.4
Limit
± 20
100
260
60
60
55
80
30
45
83
53
b, c
b, c
b, c
a
a
b, c
b, c
Maximum
1.5
23
Vishay Siliconix
G
SiR882DP
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
mJ
°C
W
V
A
1

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sir882dp Summary of contents

Page 1

... Bottom View Ordering Information: SiR882DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... SiR882DP Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 700 2 1.1 0.8 0 SiR882DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiR882DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0.0 - 0 250 μ 0 Junction Temperature (°C) J Threshold Voltage 100 10 0.1 0.01 www.vishay.com 4 0.05 0.04 0. °C 0.02 0.01 0.00 0.8 1.0 1.2 0 200 160 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiR882DP Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... SiR882DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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