SIR882DP-T1-GE3 Vishay, SIR882DP-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIR882DP-T1-GE3
• Description: MOSFET N-CH 100V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR882DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 1930pF @ 50V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 7100µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR882DP-T1-GE3TR

SiR882DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
www.vishay.com
4
0.001
- 0.8
- 0.2
- 0.4
- 0.6
0.01
100
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
T
J
0
J
= 150 °C
- Source-to-Drain Voltage (V)
- Junction Temperature (°C)
0.4
Threshold Voltage
25
I
D
0.6
50
= 250 μA
0.01
100
T
75
0.1
10
J
0.01
0.8
1
= 25 °C
I
D
Limited by R
100
Single Pulse
Safe Operating Area, Junction-to-Ambient
T
= 5 mA
* V
A
= 25 °C
GS
1.0
> minimum V
125
V
0.1
DS
DS(on)
- Drain-to-Source Voltage (V)
150
1.2
*
GS
at which R
1
DS(on)
BVDSS Limited
0.05
0.04
0.03
0.02
0.01
0.00
10
200
160
120
is specified
80
40
0.001
0
0
I
On-Resistance vs. Gate-to-Source Voltage
D
Single Pulse Power, Junction-to-Ambient
= 20 A
1
100
2
1 ms
100 ms
10 s
DC
10 ms
1 s
V
0.01
GS
T
J
3
- Gate-to-Source Voltage (V)
= 25 °C
4
Time (s)
0.1
5
T
S10-2681-Rev. B, 22-Nov-10
J
6
= 125 °C
Document Number: 65932
7
1
8
9
10
10