SIR882DP-T1-GE3 Vishay, SIR882DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR882DP-T1-GE3
• Description: MOSFET N-CH 100V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SIR882DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 1930pF @ 50V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 7100µohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SIR882DP-T1-GE3TR

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
0.010
0.009
0.008
0.007
0.006
0.011
16
10
80
64
48
32
0
0
8
6
4
2
On-Resistance vs. Drain Current and Gate Voltage
0
0
0
I
D
= 20 A
0.5
16
8
V
DS
Output Characteristics
- Drain-to-Source Voltage (V)
Q
V
I
D
g
GS
V
- Total Gate Charge
- Drain Current (A)
Gate Charge
DS
1.0
32
16
= 7.5 V
= 25 V
V
V
GS
GS
= 4.5 V
= 10 V thru 4 V
1.5
48
24
V
GS
V
V
GS
DS
= 3 V
V
= 10 V
= 50 V
2.0
64
DS
32
= 75 V
2.5
80
40
3500
2800
2100
1400
700
0.8
0.5
2.0
1.7
1.4
1.1
10
0
8
6
4
2
0
- 50
0
0
I
D
= 20 A
On-Resistance vs. Junction Temperature
- 25
20
1
T
V
V
C
DS
GS
C
Transfer Characteristics
0
T
= 125 °C
T
rss
J
- Drain-to-Source Voltage (V)
C
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
= 25 °C
25
Capacitance
40
2
50
C
C
iss
oss
Vishay Siliconix
60
3
T
75
C
V
GS
= - 55 °C
SiR882DP
= 10 V
100
V
www.vishay.com
GS
80
4
= 4.5 V
125
100
150
5
3