SI7703EDN-T1-GE3 Vishay, SI7703EDN-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI7703EDN-T1-GE3
• Description: MOSFET P-CH D-S 20V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7703EDN-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1V @ 800µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7703EDN-T1-GE3TR

MOSFET TYPICAL CHARACTERISTICS T
SCHOTTKY TYPICAL CHARACTERISTICS T
Document Number: 71429
S-83043-Rev. C, 22-Dec-08
0.0001
0.001
0.01
0.1
20
10
0.01
0.01
1
0.1
0.1
0
2
1
2
1
10
Reverse Current vs. Junction Temperature
10
-4
-4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
Single Pulse
2 5
0.02
T
J
20 V
- Junction Temperature (°C)
0.05
5 0
0.1
10
-3
Single Pulse
7 5
10 V
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
1 0 0
-3
10
-2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
150
A
= 25 °C, unless otherwise noted
A
10
= 25 °C, unless otherwise noted
-1
10
-2
0.1
1
5
1
0
0.2
T
J
= 150 °C
V
F
Forward Voltage Drop
1 0
10
- Forward Voltage Drop (V)
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
-1
DM
JM
0.4
- T
t
A
1
= P
Vishay Siliconix
t
2
DM
0.6
Si7703EDN
Z
T
thJA
J
th J A
100
= 25 °C
t
t
1
2
(t )
= 75 °C/W
www.vishay.com
0.8
600
1
1.0
5