SI7703EDN-T1-GE3 Vishay, SI7703EDN-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI7703EDN-T1-GE3
• Description: MOSFET P-CH D-S 20V 1212-8 PPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7703EDN-T1-GE3

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 48 mOhm @ 6.3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.3A
• Vgs(th) (max) @ Id: 1V @ 800µA
• Gate Charge (qg) @ Vgs: 18nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8
• Transistor Polarity: P Channel + Schottky Diode
• Continuous Drain Current Id: -6.3A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 90mohm
• Rds(on) Test Voltage Vgs: 12V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7703EDN-T1-GE3TR

Si7703EDN
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS T
www.vishay.com
4
- 0.1
- 0.2
0.4
0.3
0.2
0.1
0.0
20
10
5
4
3
2
1
0
1
- 50
0
0
- 25
Source-Drain Diode Forward Voltage
V
I
D
T
DS
2
J
= 6.3 A
0.3
= 150 °C
V
= 10 V
SD
0
Q
- Source-to-Drain Voltage (V)
4
g
I
Threshold Voltage
D
T
- Total Gate Charge (nC)
J
0.6
= 800 µA
2 5
- T emperature (°C)
Gate Charge
6
5 0
0.9
8
T
7 5
J
= 25 °C
1.2
10
100
1.5
12
125
1.8
150
A
14
= 25 °C, unless otherwise noted
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
1.5
1.3
1.1
0.9
0.7
50
40
30
20
10
0.001
0
- 50
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
On-Resistance vs. Junction Temperature
- 25
V
I
D
0.01
GS
= 6.3 A
1
= 4.5 V
V
T
GS
0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
0.1
2 5
2
Time (s)
5 0
S-83043-Rev. C, 22-Dec-08
1
Document Number: 71429
I
D
3
= 6.3 A
7 5
10
100
4
100
125
150
600
5