SI7703EDN-T1-GE3 Vishay, SI7703EDN-T1-GE3 Datasheet
SI7703EDN-T1-GE3
Specifications of SI7703EDN-T1-GE3
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SI7703EDN-T1-GE3 Summary of contents
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... Bottom View Ordering Information: Si7703EDN-T1-E3 (Lead (Pb)-free) Si7703EDN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage (MOSFET and Schottky) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (T = 150 °C) (MOSFET) J Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) ...
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... Si7703EDN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter t ≤ Junction-to-Ambient Steady State Junction-to-Case (Drain) Steady State Notes a. Surface Mounted on 1" x 1" FR4 board. MOSFET SPECIFICATIONS T Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance ...
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... I - Drain Current (A) D On-Resistance vs. Drain Current Document Number: 71429 S-83043-Rev. C, 22-Dec- °C, unless otherwise noted thru 2 1.5 V 2.5 3.0 3 Si7703EDN Vishay Siliconix 10000 1000 100 T = 150 ° 0 °C J 0.01 0.001 Gate-to-Source Voltage (V) GS Gate Current vs. Gate-Source Voltage ° °C ...
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... Si7703EDN Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 6 Total Gate Charge (nC) g Gate Charge 150 ° 0.3 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 800 µA D 0.3 0.2 0.1 0.0 - 0 emperature (°C) J Threshold Voltage www.vishay.com °C, unless otherwise noted °C J 1.2 1 ...
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... Document Number: 71429 S-83043-Rev. C, 22-Dec- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case = 25 °C, unless otherwise noted 125 150 Si7703EDN Vishay Siliconix Notes Duty Cycle Per Unit Base = °C ...
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... Si7703EDN Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...