MCF54452VR266 Freescale Semiconductor, MCF54452VR266 Datasheet - Page 19

• Manufacturer Part Number: MCF54452VR266
• Description: IC MPU 32BIT 266MHZ 360TEPBGA
• Manufacturer: Freescale Semiconductor
• Series: MCF5445xr

Specifications of MCF54452VR266

• Core Processor: Coldfire V4
• Core Size: 32-Bit
• Speed: 266MHz
• Connectivity: I²C, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, WDT
• Number Of I /o: 132
• Program Memory Type: ROMless
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 1.35 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 360-TEPBGA
• Family Name: MCF5445X
• Device Core: ColdFire
• Device Core Size: 32b
• Frequency (max): 266MHz
• Instruction Set Architecture: RISC
• Supply Voltage 1 (typ): 3.3V
• Operating Supply Voltage (max): 1.65/3.6V
• Operating Supply Voltage (min): 1.35/3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 360
• Package Type: TEBGA
• Leaded Process Compatible: Yes
• Rohs Compliant: Yes
• Peak Reflow Compatible (260 C): Yes
• For Use With: M54455EVB - BOARD EVAL FOR MCF5445X
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Compliant

where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
5.3
5.4
Freescale Semiconductor
Internal logic supply voltage
PLL analog operation voltage range
External I/O pad supply voltage
Internal oscillator supply voltage
Real-time clock supply voltage
SDRAM I/O pad supply voltage — DDR mode
SDRAM I/O pad supply voltage — DDR2 mode
SDRAM I/O pad supply voltage — Mobile DDR mode
SDRAM input reference voltage
Input High Voltage
Input Low Voltage
Input Hysteresis
Input Leakage Current
High Impedance (Off-State) Leakage Current
Output High Voltage (All input/output and all output pins)
Output Low Voltage (All input/output and all output pins)
V
V
I
I
OH
OL
in
in
= V
= V
= 5.0mA
= –5.0 mA
ESD Protection
DC Electrical Specifications
DD
DD
A
. Using this value of K, the values of P
or V
or V
1
2
A
ESD Target for Human Body Model
.
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets
the device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
SS
SS
, All input/output and output pins
, Input-only pins
Characteristics
Characteristic
1
MCF5445x ColdFire
Table 7. ESD Protection Characteristics
1
Table 8. DC Electrical Specifications
2
D
®
and T
Microprocessor Data Sheet, Rev. 6
J
Symbol
can be obtained by solving
HBM
OSCV
RTCV
Symbol
SDV
SDV
SDV
SDV
PV
EV
V
IV
V
V
V
I
V
HYS
I
OZ
Value
OH
OL
in
2000
DD
IH
IL
DD
DD
REF
DD
DD
DD
Equation 3
DD
DD
1, 2
0.49 x SDV
0.06 x EV
0.85 × EV
0.7 x EV
Equation 1
V
SS
–10.0
1.35
1.35
1.35
2.25
–2.5
Min
3.0
3.0
1.7
1.7
by measuring P
__
– 0.3
Units
DD
DD
DD
DD
V
Electrical Characteristics
and
0.51 x SDV
0.35 x EV
0.15 × EV
Equation 2
Max
1.65
1.65
1.65
2.75
3.65
10.0
3.6
3.6
1.9
1.9
2.5
__
—
D
(at equilibrium)
DD
DD
DD
iteratively
Units
mV
μA
μA
V
V
V
V
V
V
V
V
V
V
V
V
V
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