HD64F2319VTE25 Renesas Electronics America, HD64F2319VTE25 Datasheet - Page 661
HD64F2319VTE25
Manufacturer Part Number
HD64F2319VTE25
Description
IC H8S MCU FLASH 512K 100-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of HD64F2319VTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
71
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2319VTE25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Notes: 1. Except when switching modes, the level of the mode pins (MD2 to MD0) must be fixed until
φ
V
FWE
MD2 to MD0
RES
SWE bit
CC
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
2. See section 20.3.6, Flash Memory Characteristics.
3. Mode programming setup time t
power-off by pulling the pins up or down.
*1
Figure 17.31 Power-On/Off Timing (User Program Mode)
t
OSC1
t
MDS
SWE set
*3
*2
Wait time: x
MDS
(min) = 200 ns
Programming/
erasing
possible
Rev.7.00 Feb. 14, 2007 page 627 of 1108
SWE cleared
Wait time: 100 μs
Min 0 μs
REJ09B0089-0700
Section 17 ROM
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