MC68HC908EY16CFA Freescale Semiconductor, MC68HC908EY16CFA Datasheet - Page 36

• Manufacturer Part Number: MC68HC908EY16CFA
• Description: IC MCU 16K FLASH 8MHZ SPI 32LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908EY16CFA

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: LIN, SCI, SPI
• Peripherals: POR, PWM
• Number Of I /o: 24
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Processor Series: HC08EY
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: ESCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 24
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, M68CBL05CE, ZK-HC08EY-A
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: No

Memory
2.6.1 FLASH Control Register
The FLASH control register (FLCR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
36
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can be set only if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the 16-Kbyte FLASH array for mass or page erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
Reset:
Read:
Write:
$FE08
Bit 7
0
0
MC68HC908EY16 • MC68HC908EY8 Data Sheet, Rev. 10
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0