ATTINY15L-1SC Atmel, ATTINY15L-1SC Datasheet - Page 62
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ATTINY15L-1SC
Manufacturer Part Number
ATTINY15L-1SC
Description
IC AVR MCU 1K FLASH 2.7V SO8
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY15L-1SC
Core Processor
AVR
Core Size
8-Bit
Speed
1.6MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
1KB (512 x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
0°C ~ 70°C
Package / Case
8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Ram Size
-
Connectivity
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY15L-1SC
Manufacturer:
ATMEL
Quantity:
3 447
Part Number:
ATTINY15L-1SC
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Table 27. Low-voltage Serial Programming Instruction Set
Note:
62
Instruction
Programming Enable
Chip Erase
Read Program Memory
Write Program Memory
Read EEPROM
Memory
Write EEPROM
Memory
Write Lock Bits
Read Lock Bits
Read Signature Bytes
Write Fuse Bits
Read Fuse Bits
Read Calibration Byte
1. a = address high bits
ATtiny15L
b = address low bits
H = 0 – low byte, 1 – high byte
o = data out
i = data in
x = don’t care
1 = Lock bit 1
2 = Lock bit 2
3 = CKSEL0 Fuse
4 = CKSEL1 Fuse
5 = RSTDISBL Fuse
6 = SPIEN Fuse
7 = BODEN Fuse
8 = BODLEVEL Fuse
1010 1100
1010 1100
0010 H000
0100 H000
1010 0000
1100 0000
1010 1100
0101 1000
0011 0000
1010 1100
0101 0000
0011 1000
Byte 1
0101 0011
100x xxxx
xxxx xxxa
xxxx xxxa
xxxx xxxx
xxxx xxxx
1111 1211
xxxx xxxx
xxxx xxxx
101x xxxx
xxxx xxxx
xxxx xxxx
Byte 2
Instruction Format
xxxx xxxx
xxxx xxxx
bbbb bbbb
bbbb bbbb
xxbb bbbb
xxbb bbbb
xxxx xxxx
xxxx xxxx
0000 00bb
xxxx xxxx
xxxx xxxx
0000 0000
(1)
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
oooo oooo
iiii iiii
xxxx xxxx
xxxx x21x
oooo oooo
8765 1143
8765 xx43
oooo oooo
Byte4
Operation
Enable Serial Programming while
RESET is low.
Chip Erase Flash and EEPROM
memory arrays.
Read H (high or low) data o from
program memory at word address
a:b.
Write H (high or low) data i to
Program memory at word address
a:b.
Read data o from EEPROM memory
at address b.
Write data i to EEPROM memory at
address b.
Write Lock bits. Set bits 1,2 = “0” to
program Lock bits.
Read Lock bits. “0” = programmed,
“1” = unprogrammed.
Read signature byte o at address b.
Set bits 8 - 3 = “0” to program, “1” to
unprogram.
Read Fuse bits. “0” = programmed,
“1” = unprogrammed.
1187H–AVR–09/07