M30800SFP-BL#U5 Renesas Electronics America, M30800SFP-BL#U5 Datasheet - Page 276

MCU 3/5V 0K,PB-FREE 100-QFP

M30800SFP-BL#U5

Manufacturer Part Number
M30800SFP-BL#U5
Description
MCU 3/5V 0K,PB-FREE 100-QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/80r
Datasheet

Specifications of M30800SFP-BL#U5

Core Processor
M16C/80
Core Size
16-Bit
Speed
20MHz
Connectivity
SIO, UART/USART
Peripherals
DMA, PWM, WDT
Number Of I /o
45
Program Memory Type
ROMless
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 10x10b, D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M30800SFP-BL#U5M30800SFP-BL#D5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Company:
Part Number:
M30800SFP-BL#U5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
M
R
R
e
E
1
v
J
6
Figure 28.20 V
1 .
0
C
9
0 .
8 /
B
Memory expansion Mode and Microprocessor Mode
(When accessing external memory area with 3 wait, and select multiplexed bus)
CSi
ADi
/DBi
ADi
BHE
RD
CSi
ADi
/DBi
ADi
BHE
WR,WRL,
WRH
BCLK
ALE
BCLK
ALE
0
0
0
Read Timing
Write Timing
*2:It depends on operation frequency.
1
A
G
8
*1:It depends on operation frequency.
u
7
o r
t
t
t
t
. g
d(AD-ALE)
h(ALE-AD)
h(WR-CS)
d(DB-WR)
(m=3 and 5 when 2 wait and 3 wait, respectively.)
0 -
u
1
t
t
t
t
0
d(AD-ALE)
h(ALE-AD)
ac3(RD-DB)
ac3(AD-DB)
p
0
, 2
25ns.max
t
0
d(BCLK-ALE)
t
25ns.max
d(BCLK-ALE)
=(tcyc/2-20)ns.min, t
=(tcyc/2 x m-40)ns.min
2
=(tcyc/2-27)ns.min
=(tcyc/2-20)ns.min, t
t
CC
0
d(BCLK-CS)
25ns.max
t
t
t
t
t
25ns.max
25ns.max
d(BCLK-AD)
d(AD-ALE) *2
0
d(AD-ALE)
25ns.max
d(BCLK-CS)
d(BCLK-AD)
=(tcyc/2-27)ns.min
=(tcyc/2-20)ns.min, t
=3V timing diagram (6)
t
5
=(tcyc/2 x m-55)ns.max (m=3 and 5 when 2 wait and 3 wait, respectively.)
=(tcyc/2 x n-55)ns.max (n=5 and 7 when 2 wait and 3 wait, respectively.)
ac3(AD-DB)
Page 263
Address
Address
*1
t
h(BCLK-ALE)
t
*1
-2ns.min
h(BCLK-ALE)
t
t
-2ns.min
h(ALE-AD) *1
h(ALE-AD) *2
h(WR-DB)
h(WR-AD)
f o
h(RD-AD)
3
t
t
d(BCLK-WR)
2
d(BCLK-RD)
=(tcyc/2-20)ns.min
=(tcyc/2-20)ns.min
9
25ns.max
25ns.max
=(tcyc/2-20)ns.min, t
t
dz(RD-AD)
8ns.max
tcyc
tcyc
t
ac3(RD-DB) *1
Measuring conditions
h(RD-CS)
• V
• Input timing voltage
• Output timing voltage
Data output
t
d(DB-WR) *2
CC
=(tcyc/2-20)ns.min
:Determined with V
:Determined with V
=3V±10%
IH
OH
=1.5V, V
=1.5V, V
t
h(BCLK-WR)
t
-3ns.min
h(BCLK-RD)
t
0ns.min
28. Electrical characteristics
su(DB-BCLK)
IL
OL
Data input
=0.5V
40ns.min
=1.5V
t
h(WR-CS) *2
t
t
t
t
h(RD-AD) *1
h(WR-DB) *2
h(WR-AD) *2
h(RD-CS)
t
h(RD-DB)
0ns.min
Vcc=3V
*1
t
h(BCLK-AD)
t
0ns.min
t
0ns.min
t
t
0ns.min
h(BCLK-CS)
0ns.min
h(BCLK-CS)
h(BCLK-DB)
h(BCLK-AD)
0ns.min
Address
Address

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