D12312SVTE25 Renesas Electronics America, D12312SVTE25 Datasheet - Page 690
D12312SVTE25
Manufacturer Part Number
D12312SVTE25
Description
MCU 3V 0K 100-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.D12312SVTE25V.pdf
(1146 pages)
Specifications of D12312SVTE25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-TQFP, 100-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Program Memory Size
-
Other names
HD6412312SVTE25
HD6412312SVTE25
HD6412312SVTE25
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12312SVTE25V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 17 ROM
17.16
In the on-board programming modes, flash memory programming and erasing is performed by
software, using the CPU. There are four flash memory operating modes: program mode, erase
mode, program-verify mode, and erase-verify mode. Transition to these modes can be made for
addresses H'000000 to H'03FFFF by setting the PSU1, ESU1, P1, E1, PV1, and EV1 bits in
FLMCR1, and for addresses H'040000 to H'07FFFF by setting the PSU2, ESU2, P2, E2, PV2, and
EV2 bits in FLMCR2.
The flash memory cannot be read while being programmed or erased. Therefore, the program that
controls flash memory programming/erasing (the programming control program) should be
located and executed in on-chip RAM, external memory, or flash memory except for the above
address areas. When the program is located in external memory, an instruction for programming
the flash memory and the following instruction should be located in on-chip RAM. The DTC
should not be activated before or after the instruction for programming the flash memory is
executed.
Notes: 1. Operation is not guaranteed if setting/resetting of the SWE1, ESU1, PSU1, EV1, PV1,
17.16.1 Program Mode (n = 1 for addresses H'000000 to H'03FFFF, and n = 2 for
Follow the procedure shown in the program/program-verify flowchart in figure 17.45 to write data
or programs to flash memory. Performing program operations according to this flowchart will
enable data or programs to be written to flash memory without subjecting the device to voltage
stress or sacrificing program data reliability. Programming should be carried out 128 bytes at a
time.
For the wait times (x, y, z1, z2, z3 α, ß, γ, ε, η, and θ) after bits are set or cleared in flash memory
control register n (FLMCRn) and the maximum number of programming operations (N), see
section 20.3.6, Flash Memory Characteristics.
Following the elapse of (x) μs or more after the SWEn bit is set to 1 in flash memory control
register n (FLMCRn), 128-byte program data is stored in the program data area and reprogram
Rev.7.00 Feb. 14, 2007 page 656 of 1108
REJ09B0089-0700
2. Perform programming in the erased state. Do not perform additional programming on
3. Do not program addresses H'000000 to H'03FFFF and H'040000 to H'07FFFF
Programming/Erasing Flash Memory
addresses H'040000 to H'07FFFF)
E1, and P1 bits in FLMCR1 or setting/resetting of the SWE2, ESU2, PSU2, EV2, PV2,
E2, and P2 bits in FLMCR2 is executed by a program in flash memory.
previously programmed addresses.
simultaneously. Operation is not guaranteed when programming is performed
simultaneously.
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