MC9S08RD32CDWE Freescale Semiconductor, MC9S08RD32CDWE Datasheet - Page 45

• Manufacturer Part Number: MC9S08RD32CDWE
• Description: IC MCU 32K FLASH 2K RAM 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08RD32CDWE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 23
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: S08RD
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: SCI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 39
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08RG60E
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Details

4.4.4
The burst program command is used to program sequential bytes of data in less time than would be
required using the standard program command. This is possible because the high voltage to the FLASH
array does not need to be disabled between program operations. Ordinarily, when a program or erase
command is issued, an internal charge pump associated with the FLASH memory must be enabled to
supply high voltage to the array. Upon completion of the command, the charge pump is turned off. When
a burst program command is issued, the charge pump is enabled and remains enabled after completion of
the burst program operation if the following two conditions are met:
The first byte of a series of sequential bytes being programmed in burst mode will take the same amount
of time to program as a byte programmed in standard mode. Subsequent bytes will program in the burst
Freescale Semiconductor
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The new burst program command has been queued before the current program operation
completes.
The next sequential address selects a byte on the same physical row as the current byte being
programmed. A row of FLASH memory consists of 64 bytes. A byte within a row is selected by
addresses A5 through A0. A new row begins when addresses A5 through A0 are all zero.
Burst Program Execution
Figure 4-3. FLASH Program and Erase Flowchart
MC9S08RC/RD/RE/RG Data Sheet, Rev. 1.11
0
TO BUFFER ADDRESS AND DATA
WRITE COMMAND TO FCMD
TO LAUNCH COMMAND
AND CLEAR FCBEF
WRITE TO FCDIV
WRITE 1 TO FCBEF
WRITE TO FLASH
CLEAR ERROR
FACCERR ?
FACCERR ?
FPVIO OR
START
FCCF ?
DONE
1
NO
(1)
(2)
0
YES
(2)
checking FCBEF or FCCF.
Wait at least four cycles before
(1)
ERROR EXIT
after reset.
Required only once
Memory
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