MCF51QE96CLH Freescale Semiconductor, MCF51QE96CLH Datasheet - Page 30

• Manufacturer Part Number: MCF51QE96CLH
• Description: IC MCU 32BIT 96K FLASH 64-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF51QEr

Specifications of MCF51QE96CLH

• Core Processor: Coldfire V1
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 54
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 20x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: MCF51QE
• Core: ColdFire V1
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 50.33 MHz
• Number Of Programmable I/os: 54
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: EVBQE128, DEMOQE128
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 24 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
3.13
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section of the MCF51QE128 Reference Manual.
30
1
2
3
4
5
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
C
D
D
D
D
P
P
P
P
C
C
DD
Supply voltage for program/erase
-40°C to 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Longword program time (random location)
Longword program time (burst mode)
Page erase time
Mass erase time
Longword program current
Page erase current
Program/erase endurance
Data retention
Flash Specifications
T
T = 25°C
= 3.0 V, bus frequency = 4.0 MHz.
L
to T
H
= –40°C to + 85°C
5
Characteristic
2
(2)
3
1
4
3
MCF51QE128 Series Data Sheet, Rev. 7
Table 19. Flash Characteristics
(2)
(2)
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
—
15
5
100,000
Typical
20,000
4000
100
9.7
7.6
—
9
4
DD
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
3.6
3.6
—
—
—
—
—
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V