ST10F272M-4T3 STMicroelectronics, ST10F272M-4T3 Datasheet - Page 28
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ST10F272M-4T3
Manufacturer Part Number
ST10F272M-4T3
Description
MCU 16BIT 256K FLASH 144-LQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet
1.ST10F272M-4TR3.pdf
(176 pages)
Specifications of ST10F272M-4T3
Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-MQFP, 144-PQFP
Processor Series
ST10F27x
Core
ST10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ST10F272M-4T3
Manufacturer:
STMicroelectronics
Quantity:
10 000
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Internal Flash memory
5.3
Note:
Caution:
5.4
5.4.1
28/176
Write operation
The Flash module has one single register interface mapped in the memory space of the
IBus (08’0000h - 08’0015h). All the operations are enabled through four 16-bit control
registers: Flash control register 1-0 High/Low (FCR1H/L-FCR0H/L). Eight other 16-bit
registers are used to store Flash address and data for program operations (FARH/L and
FDR1H/L-FDR0H/L) and write operation error flags (FERH/L). All registers are accessible
with 8- and 16-bit instructions (since the IBUS operates in 16-bit mode for read/write
accesses to data).
The register that controls the temporary unprotection of the Flash is located on the X-bus at
address 00’EB50h in the XMiscellaneous register area.
Before accessing the IFlash module (and consequently the Flash register to be used for
program/erasing operations), the ROMEN bit in SYSCON register must be set.
During a Flash write operation any attempt to read the Flash itself, that is under
modification, will output invalid data (software trap 009Bh). This means that the Flash is not
fetchable when a programming operation is active: The write operation commands must be
executed from another memory (internal RAM or external memory), as in ST10F269 device.
In fact, due to IBus characteristics, it is not possible to perform a write operation on IFlash,
when fetching code from IFlash. Direct addressing is not allowed for write accesses to
IFlash control registers.
Power supply drop
If during a write operation the internal low voltage supply drops below a certain internal
voltage threshold, any write operation running is suddenly interrupted and the module is
reset to read mode. At following power-on, the interrupted Flash write operation must be
repeated.
Registers description
Flash control register 0 low (FCR0L)
The Flash control register 0 low (FCR0L) together with the Flash control register 0 high
(FCR0H) are used to enable and to monitor all the write operations on the IFlash. The user
has no access in write mode to the test-Flash (B0TF). Moreover, the test-Flash block is seen
by the user in bootstrap mode only.
FCR0L (0x08 0000)
15
Warning:
14
13
12
During a write operation, when bit LOCK of FCR0 is set, it is
forbidden to write into the Flash control registers.
11
Reserved
10
-
9
8
FCR
7
6
5
LOCK Reserved BSY0 Res.
RO
4
3
Reset value: 0000h
-
2
ST10F272M
RO
1
0
-
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