STR911FAM44X6T STMicroelectronics, STR911FAM44X6T Datasheet - Page 70
![MCU ARM9 512KB FLASH 80LQFP](/photos/39/69/396970/tqfp-80_sml.jpg)
STR911FAM44X6T
Manufacturer Part Number
STR911FAM44X6T
Description
MCU ARM9 512KB FLASH 80LQFP
Manufacturer
STMicroelectronics
Series
STR9r
Datasheet
1.STEVAL-IFW001V1.pdf
(102 pages)
Specifications of STR911FAM44X6T
Core Processor
ARM9
Core Size
32-Bit
Speed
96MHz
Connectivity
CAN, I²C, IrDA, Microwire, SPI, SSP, UART/USART, USB
Peripherals
Brown-out Detect/Reset, DMA, POR, PWM, WDT
Number Of I /o
40
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
96K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 2 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-LQFP
Processor Series
STR911x
Core
ARM966E-S
Data Bus Width
16 bit, 32 bit
Data Ram Size
96 KB
Interface Type
CAN, I2C, IrDA, SSP, UART, USB
Maximum Clock Frequency
96 MHz
Number Of Programmable I/os
40
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MCBSTR9, MCBSTR9U, MCBSTR9UME, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STR9-COMSTICK, STR910-EVAL, STR91X-SK/HIT, STR91X-SK/IAR, STR91X-SK/KEI, STR91X-SK/RAI, STR9-DK/RAIS, STR91X-DK/IAR, STX-PRO/RAIS, STR912-D/RAIS, STR79-RVDK/CPP, STR79-RVDKCPP/9, STR79-RVDK, STR79-RVDK/9, STR9-RVDK/BAS, STR79-RVDK/UPG
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
For Use With
MCBSTR9UME - BOARD EVAL MCBSTR9 + ULINK-MEMCBSTR9U - BOARD EVAL MCBSTR9 + ULINK2MCBSTR9 - BOARD EVAL STM STR9 SERIES497-5067 - BOARD EVAL FOR STR910 FAMILY497-5066 - KIT STARTER KEIL FOR STR910497-5065 - KIT STARTER IAR KICKSTART STR912497-5064 - KIT STARTER FOR STR910 FAMILY
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STR911FAM44X6T
Manufacturer:
HITTITE
Quantity:
4 300
Company:
Part Number:
STR911FAM44X6T
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
7.8
7.8.1
Table 23.
1. Guaranteed by characterization, not tested in production.
7.8.2
Note:
Table 24.
1.
70/102
Bank erase
Sector erase
Bank program
Sector program
Word program
Symbol
V
V
DD
DR
= 1.8 V, V
Memory characteristics
SRAM characteristics
SRAM and hardware registers
Flash memory characteristics
V
Flash read access for sequential addresses is 0 wait states at 96 MHz. Flash read access
for non-sequential accesses requires 2 wait states when FMI clock is above 66 MHz. See
STR91xF Flash Programming Manual for more information.
Flash memory program/erase characteristics (Flash size
Supply voltage for data retention
DDQ
DDQ
= 3.3 V
Primary bank (512 Kbytes)
Primary bank (256 Kbytes)
Secondary bank (32 Kbytes)
Of primary bank (64 Kbytes)
Of secondary bank (8 Kbytes)
Primary bank (512 Kbytes)
Primary bank (256 Kbytes)
Secondary bank (32 Kbytes)
Of primary bank (64 Kbytes)
Of secondary bank (8 Kbytes)
Parameter
= 2.7 - 3.6 V, V
,
T
A
Parameter
= 25 °C.
DD
= 1.65 - 2 V, T
(1)
Doc ID 13495 Rev 6
Half word (16 bits)
T
Test conditions
A
= 85 °C (worst case)
A
= -40 / 85 °C unless otherwise specified.
Conditions
Typ
1300
3700
1900
700
300
250
500
60
8
4
8
(1)
Min
1.1
≤
Typ after 100K
512 KB)
W/E cycles
Value
1400
4700
2000
520
750
320
260
4.5
62
Typ
9
9
(1)
STR91xFAxxx
Max
1800
5100
2550
Max
11.5
950
450
320
640
80
11
6
Unit
Unit
V
ms
ms
ms
ms
ms
ms
ms
ms
µs
s
s