STM32F102C8T6TR STMicroelectronics, STM32F102C8T6TR Datasheet - Page 46

MCU 32BIT ARM 64K FLASH 48-LQFP

STM32F102C8T6TR

Manufacturer Part Number
STM32F102C8T6TR
Description
MCU 32BIT ARM 64K FLASH 48-LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet

Specifications of STM32F102C8T6TR

Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
48MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART, USB
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
37
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Processor Series
STM32F102x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
10 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
37
Number Of Timers
6
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 10 Channel
For Use With
497-10030 - STARTER KIT FOR STM32497-6438 - BOARD EVALUTION FOR STM32 512K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

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Price
Part Number:
STM32F102C8T6TR
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0
Electrical characteristics
5.3.11
46/69
Table 30.
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Table 31.
1. Based on characterization results, not tested in production.
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
These tests are compliant with EIA/JESD 78 IC latch-up standard.
Table 32.
Symbol Parameter
V
V
Symbol
S
Symbol
ESD(HBM)
ESD(CDM)
EMI
LU
A supply overvoltage is applied to each power supply pin
A current injection is applied to each input, output and configurable I/O pin
Peak level
Static latch-up class
EMI characteristics
ESD absolute maximum ratings
Electrostatic discharge voltage
(human body model)
Electrostatic discharge voltage
(charge device model)
Electrical sensitivities
Parameter
V
DD
Ratings
3.3 V, T
Conditions
Doc ID 15056 Rev 3
A
T
A
25 °C,
+105 °C conforming to JESD78A
T
to JESD22-A114
T
to JESD22-C101
A
A
0.1 MHz to 30 MHz
30 MHz to 130 MHz
130 MHz to 1GHz
SAE EMI Level
+25 °C, conforming
+25 °C, conforming
frequency band
Conditions
Monitored
Conditions
STM32F102x8, STM32F102xB
Max vs. [f
2
II
Class
8/48 MHz
3.5
13
7
8
HSE
Maximum
value
2000
/f
500
HCLK
II level A
(1)
Class
]
dBµV
Unit
Unit
V
-

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