ATTINY861-15MZ Atmel, ATTINY861-15MZ Datasheet - Page 173

• Manufacturer Part Number: ATTINY861-15MZ
• Description: MCU AVR 8K FLASH 15MHZ 32-QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY861-15MZ

• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Speed: 16MHz
• Number Of I /o: 16
• Eeprom Size: 512 x 8
• Core Processor: AVR
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Program Memory Size: 8KB (8K x 8)
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Connectivity: USI
• Core Size: 8-Bit
• Processor Series: ATTINY8x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Interface Type: SPI
• Maximum Clock Frequency: 16 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Development Tools By Supplier: ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAVRMC320
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 11 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

22.7
22.7.1
22.7.2
2588B–AVR–11/06
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Table 22-11. XA1 and XA0 Coding
Table 22-12. Command Byte Bit Coding
The following algorithm puts the device in parallel programming mode:
1. Apply 4.5 - 5.5V between V
2. Set RESET to “0” and toggle XTAL1 at least six times.
3. Set the Prog_enable pins listed in
4. Apply 11.5 - 12.5V to RESET. Any activity on Prog_enable pins within 100 ns after +12V
5. Wait at least 50 µs before sending a new command.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
Command Byte
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
XA1
100 ns.
has been applied to RESET, will cause the device to fail entering programming mode.
0
0
1
1
1000 0000
0100 0000
0010 0000
0001 0000
0001 0001
0000 1000
0000 0100
0000 0010
0000 0011
XA0
0
1
0
1
Action when XTAL1 is Pulsed
Load Flash or EEPROM Address (High or low address byte determined by BS1).
Load Data (High or Low data byte for Flash determined by BS1).
Load Command
No Action, Idle
Command Executed
Chip Erase
Write Fuse bits
Write Lock bits
Write Flash
Write EEPROM
Read Signature Bytes and Calibration byte
Read Fuse and Lock bits
Read Flash
Read EEPROM
CC
and GND.
Table 22-10 on page 172
ATtiny261/461/861
to “0000” and wait at least
173