C8051F902-GU Silicon Laboratories Inc, C8051F902-GU Datasheet - Page 133
![IC MCU 8BIT 8KB FLASH 24QSOP](/photos/12/15/121586/c8051f9xx_24-qsop_sml.jpg)
C8051F902-GU
Manufacturer Part Number
C8051F902-GU
Description
IC MCU 8BIT 8KB FLASH 24QSOP
Manufacturer
Silicon Laboratories Inc
Series
C8051F9xxr
Specifications of C8051F902-GU
Program Memory Type
FLASH
Program Memory Size
8KB (8K x 8)
Package / Case
24-QSOP
Core Processor
8051
Core Size
8-Bit
Speed
25MHz
Connectivity
SMBus (2-Wire/I²C), SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Number Of I /o
16
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
0.9 V ~ 3.6 V
Data Converters
A/D 15x10/12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
C8051F9x
Core
8051
Data Ram Size
768 B
Interface Type
UART
Maximum Clock Frequency
25 MHz
Number Of Timers
4
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
PK51, CA51, A51, ULINK2
Development Tools By Supplier
C8051F912DK
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit
Package
24QSOP
Device Core
8051
Family Name
C8051F90x
Maximum Speed
25 MHz
Data Bus Width
8 Bit
Number Of Programmable I/os
16
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1849-5
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
C8051F902-GU
Manufacturer:
SEMIKRON
Quantity:
45
Company:
Part Number:
C8051F902-GU
Manufacturer:
Silicon Laboratories Inc
Quantity:
135
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13.1.2. Flash Erase Procedure
The Flash memory is organized in 512-byte pages. The erase operation applies to an entire page (setting
all bytes in the page to 0xFF). To erase an entire Flash page, perform the following steps:
Steps 4–6 must be repeated for each 512-byte page to be erased.
Notes:
13.1.3. Flash Write Procedure
A write to Flash memory can clear bits to logic 0 but cannot set them; only an erase operation can set bits
to logic 1 in Flash. A byte location to be programmed should be erased before a new value is written.
The recommended procedure for writing a single byte in Flash is as follows:
Steps 5–7 must be repeated for each byte to be written.
Notes:
13.2. Non-volatile Data Storage
The Flash memory can be used for non-volatile data storage as well as program code. This allows data
such as calibration coefficients to be calculated and stored at run time. Data is written using the MOVX
write instruction and read using the MOVC instruction. MOVX read instructions always target XRAM.
An additional 512-byte scratchpad is available for non-volatile data storage. It is accessible at addresses
0x0000 to 0x01FF when SFLE is set to 1. The scratchpad area cannot be used for code execution.
1. To maintain code compatibility with the ‘F93x-’F92x product family, the erase procedure should be performed
2. Flash security settings may prevent erasure of some Flash pages, such as the reserved area and the page
3. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
1. Flash security settings may prevent writes to some areas of Flash, such as the reserved area. For a summary
2. 8-bit MOVX instructions cannot be used to erase or write to Flash memory at addresses higher than 0x00FF.
on two consecutive 512-byte sections of memory at a time. This allows the same software to run on devices
with 1024-byte or 512-byte Flash pages. Using this technique, devices with 1024-byte Flash pages will have
each Flash page erased twice.
containing the lock bytes. For a summary of Flash security settings and restrictions affecting Flash erase
operations, please see Section “13.3. Security Options” on page 134.
of Flash security settings and restrictions affecting Flash write operations, please see Section “13.3. Security
Options” on page 134.
1. Save current interrupt state and disable interrupts.
2. Set the PSEE bit (register PSCTL).
3. Set the PSWE bit (register PSCTL).
4. Write the first key code to FLKEY: 0xA5.
5. Write the second key code to FLKEY: 0xF1.
6. Using the MOVX instruction, write a data byte to any location within the page to be erased.
7. Clear the PSWE and PSEE bits.
8. Restore previous interrupt state.
1. Save current interrupt state and disable interrupts.
2. Ensure that the Flash byte has been erased (has a value of 0xFF).
3. Set the PSWE bit (register PSCTL).
4. Clear the PSEE bit (register PSCTL).
5. Write the first key code to FLKEY: 0xA5.
6. Write the second key code to FLKEY: 0xF1.
7. Using the MOVX instruction, write a single data byte to the desired location within the 1024-
8. Clear the PSWE bit.
9. Restore previous interrupt state.
byte sector.
Rev. 1.0
C8051F91x-C8051F90x
133
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